Degradation of 430 nm thick SiO2 layers in Si/SiO2/Si structures which results from high temperature annealing (1320°C) has been studied using electron spin resonance, infra-red absorption spectroscopy and refractive index measurements. Large numbers of oxygenvacancies are found in a region ≤ 100 nm from each Si/SiO2 interface. Two types of paramagnetic defects are observed following γ or X-irradiation or hole injection. The 1106 cm−1 infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
R. Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues and E. J. van Loenen, Phys. Rev. Letts. 55 2332 (1985)
M. Liehr, J. E. Lewis and G. W. Rubloff, J. Vac. Sci. Tech. A5 1559 (1987)
G. W. Rubloff, Mat. Res. Soc. Symp. Proc. 105 11 (1988)
J. R. Schwank and D. M. Fleetwood, Appl. Phys. Lett. 53 770 (1988)
D. M. Fleetwood and J. H. Scofield, Phys. Rev. Letts. 64 579 (1990)
F. M. d’Heurle, Electrochem. Soc. Ext. Abstr. 90-2 446 (1990)
F. J. Feigl, W. B. Fowler and K. L. Yip, Sol. State Commun. 14 225 (1974)
K. H. Vanheusden and A. Stesmans, J. Appl. Phys. 74 275 (1993); W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur and R. A. B. Devine, Appl. Phys. Lett. 62 3330 (1993)
J-L. Leray, J. Margail and R. A. B. Devine, Mat. Sci. Eng. B12 153 (1992)
H. J. Hrostowski and R. H. Kaiser, Phys. Rev. 107 966 (1957)
M. Stavola, J. R. Patel, L. C. Kimmerling and P. C. Freeland, Appl. Phys. Lett. 42 73 (1983)
J. C. Mikkelsen Jr., Appl. Phys. Lett. 45 1187 (1984)
R. A. B. Devine, D. Mathiot, W. L. Warren, D. M. Fleetwood and B. Aspar, Appl. Phys. Lett. (in press, November 1993)
R. C. Newman and J. B. Willis, J. Phys. Chem. Solids 26 373 (1965)
R. A. B. Devine, W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood and B. Aspar, Nucl. Inst Meth. in Phys. Res. B (in press, 1993)
A. Golanski, R. A. B. Devine and J-C. Oberlin, J. Appl. Phys. 56 1572 (1984)
The authors gratefully acknowledge the help of Dr. J-L. Leray in X-irradiating the samples. The part of the work performed at Sandia National Laboratories was supported by the US Department of Energy under contract DE-AC04-93AL85000.
About this article
Cite this article
Devine, R.A.B., Mathiot, D., Warren, W.L. et al. Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures. MRS Online Proceedings Library 318, 623–629 (1993). https://doi.org/10.1557/PROC-318-623