NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor

Abstract

NH3-plasma treatment has been used for passivation of native-oxide-contaminated GaAs surface. Ex situ band-gap photoluminescence(PL) measurement shows enhanced intensity for the treated surfaces in direct plasma. Auger electron spectroscopy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to speculate that the graded GaN thin layer was formed on the surface. Long-term stability of the enhanced PL intensity is attributed to the formation of GaN on the surface.

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Acknowledgments

Authors would like to thank Dr. B.S.Yoo for helpful discussion on the nitridization mechanism. This work was supported by basic research fund of Korea Telecomm.

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Correspondence to Kyoung Wan Park.

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Park, K.W., Lee, S.J., Shin, M. et al. NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor. MRS Online Proceedings Library 318, 533–537 (1993). https://doi.org/10.1557/PROC-318-533

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