Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs


RF magnetron sputtering of BaTiO3 on (100) P-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTiO3 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystalline, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1cra−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×l0−10 A/cm2 at a field intensity of (2±0.5)×l05 V/cm. Breakdown voltage varied from 5×l05 to 2×l06 V/cm.

This is a preview of subscription content, access via your institution.


  1. 1.

    L. H. Park and A. F. Tasch, IEEE Circuits and Devices Mag. pl7, Jan. (1990)

    Google Scholar 

  2. 2.

    K. Sreenivas, A. Mansingh, and M. Sayer, J. Appl. Phys. 62,4475 (1987)

    CAS  Article  Google Scholar 

  3. 3.

    M. N. Kamalasanan, S. Chandra, P. C. Joshi, and A. Mansingh, Appl. Phys. Lett. 59,3547 (1991)

    CAS  Article  Google Scholar 

  4. 4.

    Q. X. Jia, Z. Q. Shi, and W. A. Anderson, Thin Solid Films 209,230 (1992)

    CAS  Article  Google Scholar 

  5. 5.

    T. L. Rose, E. M. Kelliher, A. N. Scoville, and S. E. Stone, J. Appl. Phys. 55,3706 (1984)

    CAS  Article  Google Scholar 

  6. 6.

    I. H. Pratt and S. Firestone, J. Vac. Sci. Technol. 8,256 (1971)

    CAS  Article  Google Scholar 

  7. 7.

    Y. Shintani and O. Tada, J. Appl. Phys. 41,2376 (1970)

    CAS  Article  Google Scholar 

  8. 8.

    V. S. Dharmadhikari and W. W. Grannemann, J. Appl. Phys. 53,8988 (1982)

    CAS  Article  Google Scholar 

  9. 9.

    P. Li and T. M. Lu, Appl. Phys. Lett. 57,2336 (1990)

    CAS  Article  Google Scholar 

  10. 10.

    V. S. Dharmadhikari and W. W. Grannemann, J. Vac. Sci. Techol. Al,483 (1983)

    Article  Google Scholar 

  11. 11.

    T. Mitsui and S. Nomura, Landbolt-Bernstein, Numerical Data and Functional Relationships in Science and Technology, Crystal and Solid State Physics (Springer, Berlin, 1981), Vol. 16A

  12. 12.

    P. Li amd T. M. Lu, Phys. Rev. B43, 14261 (1991)

    Google Scholar 

  13. 13.

    R. Castagne and A. Vaparille, Surface Sci. 28, 157 (1971)

    CAS  Article  Google Scholar 

Download references


This work was supported by the New York State Science and Technology Foundation.

Author information



Corresponding author

Correspondence to L. H. Chang.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Chang, L.H., Jia, Q.X. & Anderson, W.A. Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs. MRS Online Proceedings Library 318, 501–506 (1993).

Download citation