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Back-Channel Surface Modifications for a-Si:H Thin Film Transistors, TFTs, by Exposure to Plasma Excited N2O

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Abstract

We have studied different surface treatments for the back side of the channel of bottom gate a-Si:H TFTs. Two sets of different (i) channel layer thicknesses, and (ii) gate dielectric silicon nitride compositions were studied. The back channel Si-surfaces were either (i) exposed to products from an N2O plasma, or (ii) plasma oxidized. Comparisons of these back channel passivation methods indicated that relative to oxidized surfaces, the plasma N2O process, which created an oxynitride surface layer, (i) reduced the threshold voltage, (ii) decreased the sub-threshold slope (defined as V/decade of current increase) of the I-V characteristic, and (iii) increased the transconductance, or equivalently, the effective channel mobility.

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References

  1. W.E. Spear and H. Steemers, Philosophical MagazineB 47, L 77 (1983).

    Article  Google Scholar 

  2. S.S. He, D.J. Stephens, R.W. Hamaker and G. Lucovsky MRS Symp. Proc.282, 505 (1992).

    Article  Google Scholar 

  3. S.S. He, D.J. Stephens, G. Lucovsky and R.W. Hamaker, MRS Symp.Proc.284, 413 (1992).

    Article  Google Scholar 

  4. Naftali Lustig and Jerzy Kanicki, J. Appl. Phys.65, 3951 (1989).

    Article  CAS  Google Scholar 

  5. S.S. He, D.J. Stephens and G. Lucovsky, MRS Symp. Proc. 297, 871–876,(1993).

    Article  CAS  Google Scholar 

  6. Keiji Maeda, H. Koyanagi and T. Jinnai, MRS, Symp. Proc. 297,889–894,(1993).

    Article  CAS  Google Scholar 

  7. G.E. Possin and F.C. Su, MRS Symp.Proc. Vol.118, 255 (1988).

    Article  CAS  Google Scholar 

  8. G.N. Parsons, C. Kusano, and G. Lucovsky, J. Vac. Sci. Technol.A 5, 1655 (1987).

    Article  Google Scholar 

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Acknowledgments

This work is supported by NREL and ONR.

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Authors and Affiliations

  1. Departments of Physics, Materials Science and Engineering and Electrical Engineering, NC State University, Raleigh, NC, 27695-8202, USA

    S. S. He, D. J. Stephens & G. Lucovsky

Authors
  1. S. S. He
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  2. D. J. Stephens
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  3. G. Lucovsky
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He, S.S., Stephens, D.J. & Lucovsky, G. Back-Channel Surface Modifications for a-Si:H Thin Film Transistors, TFTs, by Exposure to Plasma Excited N2O. MRS Online Proceedings Library 318, 489–494 (1993). https://doi.org/10.1557/PROC-318-489

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  • DOI: https://doi.org/10.1557/PROC-318-489

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