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The Influence of Silicon Overlayers on the Electrical Conductivity of Very Thin Chromium Films

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Abstract

The influence of silicon overlayers on the electrical conductivity of 5 nm to 10 nm thick chromium films has been studied. It was found that the deposition of silicon decreases the resistivity of Cr-film by up to 24 %. Possible mechanisms for the resistance decrease due to the silicon overlayer are discussed.

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Acknowledgments

The authors greatly appreciate to Drs. E.V.Stepin and N.A.Bert for their help in electron diffraction studies and Drs. B.Y.Ber and S.Sisoev for their help in Auger electron spectroscopy studies of our films.

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Authors and Affiliations

  1. A.F.Ioffe Physico–Technical Institute, Polytechnicheskaya 26, 194021, St.Petersburg, Russia

    Andrej N. Aleshin

  2. Department of Chemical Engineering and Materials Science, Syracuse University, Syracuse, NY, 13244, USA

    Klaus Schroder

Authors
  1. Andrej N. Aleshin
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  2. Klaus Schroder
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Aleshin, A.N., Schroder, K. The Influence of Silicon Overlayers on the Electrical Conductivity of Very Thin Chromium Films. MRS Online Proceedings Library 318, 465–470 (1993). https://doi.org/10.1557/PROC-318-465

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