Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

MRS Online Proceedings Library volume 318, pages419–424(1993)Cite this article

Abstract

The structure of thin SiO2 films thermally grown on Si(100)and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30Å. This red shift is interpreted in terms of the compressive stress near the interface.

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Affiliations

  1. Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima, 724, Japan

    T. Yamazaki, S. Miyazaki, M. Fukuda & M. Hirose

  2. Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima, 724, Japan

    C. H. Bjorkman

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  1. T. Yamazaki
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  2. S. Miyazaki
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  3. C. H. Bjorkman
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  4. M. Fukuda
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  5. M. Hirose
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Correspondence to T. Yamazaki.

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Yamazaki, T., Miyazaki, S., Bjorkman, C.H. et al. Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces. MRS Online Proceedings Library 318, 419–424 (1993). https://doi.org/10.1557/PROC-318-419

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