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Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

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Abstract

The structure of thin SiO2 films thermally grown on Si(100)and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30Å. This red shift is interpreted in terms of the compressive stress near the interface.

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Authors and Affiliations

  1. Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima, 724, Japan

    T. Yamazaki, S. Miyazaki, M. Fukuda & M. Hirose

  2. Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima, 724, Japan

    C. H. Bjorkman

Authors
  1. T. Yamazaki
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  2. S. Miyazaki
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  3. C. H. Bjorkman
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  4. M. Fukuda
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  5. M. Hirose
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Yamazaki, T., Miyazaki, S., Bjorkman, C.H. et al. Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces. MRS Online Proceedings Library 318, 419–424 (1993). https://doi.org/10.1557/PROC-318-419

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  • DOI: https://doi.org/10.1557/PROC-318-419

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