Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

Abstract

Epitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

This is a preview of subscription content, access via your institution.

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

References

  1. 1

    R. Triboulet, A. Tromson-Carli, D. Lorans, and T. Nguyen Duy, J. Electron. Mater. 22, 827 (1993).

    CAS  Article  Google Scholar 

  2. 2.

    S. Wood, J.C. Greggi, R.F.C. Farrow, W.J. Takei, F.A. Shirland and A.J. Noreiha, J. Appl. Phys., 55, 4225 (1984).

    CAS  Article  Google Scholar 

  3. 3.

    S.M. Johnson, J.A. Vigil, J.B. James, C.A. Cockrum, W.H. Konkel, M.H. Kalisher, R.F. Risser, T. Tung, W.J. Hamilton, W.L. Ahlgren, and J.M. Myrosznyk, J. Electron, mater., 22, 835, (1993).

    CAS  Article  Google Scholar 

  4. 4.

    P.D. Edwall, J. Bajaj and E.R. Gertner, J. Vac. Sci. Technol., A8, (1990)1045.

    Article  Google Scholar 

  5. 5.

    W.S. Wang, H. Ehsani and I. Bhat, J. Crystal growth, 124, 670 (1992).

    CAS  Article  Google Scholar 

  6. 6.

    A. Ishizaka and Y. Shiraki, J. Electrochem. Soc., 1333 (1986) 666.

    Article  Google Scholar 

  7. 7.

    P.J. Grunthaner, F.J. Grunthaner, R.W. Fathauer, T.L. Lin, M.H. Hecht, L.D. Bell, W.J. Kaiser, F.D. Schowengerdt and J.H. Mazur, Thin Solid Films, 183, 197 (1989).

    CAS  Article  Google Scholar 

  8. 8.

    T.F. Kuech, M. Maenpaa, and S.S. Lau, Appl. Phys. Lett, 39, 245, (1981).

    CAS  Article  Google Scholar 

  9. 9.

    S.H. Shin, J.M. Arias, D.D. Edwall, M. Zandian, J.G. Pasko and R.E. DeWames, J. Vac.Sci.Technol. B10, 1492, (1992).

    Article  Google Scholar 

  10. 10.

    R.D. Feldman, R.F. Austin, D.W. Kisker, K.S. Jeffers, and P.M. Bridenbaugh, Appl. Phys. Lett, 48, 248, (1986).

    CAS  Article  Google Scholar 

  11. 11.

    G. Cohen-Solal, F. Bailly and M. Barbe, Appl. Phys. Lett., 49, 1519, (1986) and references therein.

    CAS  Article  Google Scholar 

  12. 12.

    I. Bhat, unpublished results.

  13. 13.

    H. Shtrikman, M. Oron, A. Raizman and G. Cinader, J. Electron. Mater., 17, 105, (1988).

    CAS  Article  Google Scholar 

  14. 14.

    W.S. Wang, H. Ehsani, and I. Bhat, J. Electron. Mater., 22, 873 (1993).

    CAS  Article  Google Scholar 

  15. 15.

    C.H.L. Goodman and M.V. Pessa, J. Appl. Phys., 60, R65, (1986).

    CAS  Article  Google Scholar 

  16. 16.

    D.J. Eaglesham, G.S. Higashi, and M. Cerullo, Appl. Phys. Lett., 685, 59 (1991).

    Google Scholar 

  17. 17.

    S.H. Wolff, S. Wagner, J.C. Bean, R. Hull, and J.M. Gibson, Appl. Phys. Lett., 55, (1989) 2017.

    CAS  Article  Google Scholar 

  18. 18.

    R. Sporken, S. Sivananthan, K.K. Mahavadi, G. Monfrou, M. Boukerche and J.P. Faurie, Appl. Phys. Lett., 55 (1989) 1879.

    CAS  Article  Google Scholar 

  19. 19.

    R. Sporken, Y.P. Chen, S. Sivananthan, M.D. Lange, and J.P. Faurie, J. Vac. Sci. Tech., 10B, (1992)1405.

    Google Scholar 

  20. 20.

    R. Korenstein, P. Madisan and P. Hallock, J. Vac. Sci. Technol., 10B (1992)1370.

    Article  Google Scholar 

  21. 21.

    R.L. Chou, M.S. Lin and K.S. Chou, J. Cryst. Growth, 94 (1989) 551.

    CAS  Article  Google Scholar 

  22. 22.

    T.J. de Lyon, J.A. Roth, O.K. Wu, S.M. Johnson and C.A. Cockrum, Appl. Phys. Lett., 63 (1993) 818.

    Article  Google Scholar 

  23. 23.

    Y. Takahasi, H. Ishii and K. Fujiuaga, Appl. Phys. Lett., 57 (1990) 599.

    CAS  Article  Google Scholar 

  24. 24.

    J.F. Morar, B.S. Meyerson, U.O. Karlsson, F.J. Himpsel, F.R. McFeely, D. Rieger, A. Taleb-Ibrahimi, and J.A. Yarmoff, Appl. Phys. Lett., 50, 463,(1987).

    CAS  Article  Google Scholar 

  25. 25.

    I. Bhat and W.S. Wang, to appear in Appl. Phys. Lett., January 1994.

    Google Scholar 

  26. 26.

    B.A. Joyce and R.R. Bradley, Phil. Mag. 15, 1167 (1967).

    CAS  Article  Google Scholar 

  27. 27.

    M. Racanelli and D.W. Greve, Appl. Phys. Lett., 58, 2096 (1991).

    CAS  Article  Google Scholar 

  28. 28.

    W.S. Wang and I. Bhat, to appear in J. Crystal Growth, (1994).

    Google Scholar 

  29. 29.

    M. Inoue, I. Teramoto and S. Takayanagi, J. Appl. Phys., 33, 2578 (1962).

    CAS  Article  Google Scholar 

  30. 30.

    A.G. Gaydon, “Disscociation energies and spectra of Diatomic Molecules”, 3rd ed., Chapman and Hall, London, 1968.

    Google Scholar 

Download references

Acknowledgments

The authors would like to thank Mr. Wang and Dr. Ehsani for performing many of the experimental work mentioned in this paper and also J. Barthel for technical assistance. Partial support was provided by a grant from Texas Instruments. This support is gratefully acknowledged.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Ishwara Bhat.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Bhat, I. Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy. MRS Online Proceedings Library 318, 213–224 (1993). https://doi.org/10.1557/PROC-318-213

Download citation