Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

Abstract

Near-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in ρc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with ρc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    G. Bahir, J. L. Merz, J. R. Abelson, and T. W. Sigmon, J. Electron. Mat. 16, 257 (1987).

    CAS  Article  Google Scholar 

  2. 2.

    J. A. Del Alamo and T. Mizutani, Solid-State Electron. 31, 1635 (1988).

    CAS  Article  Google Scholar 

  3. 3.

    N. S. Fatemi and V. G. Weizer, proc. Mat. Res. Soc. 260, 537 (1992)

    CAS  Article  Google Scholar 

  4. 4.

    N. S. Fatemi and V. G. Weizer, J. Appl. Phys. 74, Dec.1 (1993).

    Article  Google Scholar 

  5. 5.

    N. S. Fatemi and V. G. Weizer, J. Appl. Phys. 73, 289 (1993).

    CAS  Article  Google Scholar 

  6. 6.

    V. G. Weizer and N. S. Fatemi, J. Appl. Phys. 69, 8253 (1991).

    CAS  Article  Google Scholar 

  7. 7.

    R. H. Williams, V. Montgomery, R. R. Varma, & A. McKinley, J. Phys. D 10, L253 (1977).

    CAS  Article  Google Scholar 

  8. 8.

    V. Montgomery and R. H. Williams, J. Phys. C 15, 5887 (1982).

    CAS  Article  Google Scholar 

  9. 9.

    W. C. Dautremont-Smith, P. A. Barnes, and J. W. Stayt, J. Vac. Sci. Technol. B 2, 620 (1984).

    CAS  Article  Google Scholar 

  10. 10.

    N. S. Fatemi and V. G. Weizer, J. Electron. Mat. 20, 875 (1991).

    CAS  Article  Google Scholar 

  11. 11.

    V. G. Weizer and N. S. Fatemi, Appl. Phys. Lett. 62, 2731 (1993).

    CAS  Article  Google Scholar 

  12. 12.

    N. S. Fatemi and V. G. Weizer, J. Appl, Phys. 73, 289 (1993).

    CAS  Google Scholar 

  13. 13.

    A. W. Blakers, M. A. Green, and T. Szpitalak, IEEE Electron Dev. Lett. EDL-5, 246 (1984).

    CAS  Article  Google Scholar 

  14. 14.

    M. Nel and F. D. Auret, J. Appl. Phys. 64, 2422 (1988).

    CAS  Article  Google Scholar 

  15. 15.

    R. Kleinhenz, P. M. Mooney, C. P. Schneider, and O. Paz, Proc. “13th Int. Conf. on Defects in semiconductors,” L. C. Kimmerling and J. Paresy, Eds., (Coronado, CA, 1984), p. 627.

  16. 16.

    S. K. Krawczyk and G. Hollinger, Appl. Phys. Lett. 45, 870 (1984).

    CAS  Article  Google Scholar 

  17. 17.

    V. G. Weizer and N. S. Fatemi, J. Appl. Phys. 68, 2275 (1990).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Navid S. Fatemi.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Fatemi, N.S., Weizer, V.G. Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface. MRS Online Proceedings Library 318, 171–176 (1993). https://doi.org/10.1557/PROC-318-171

Download citation