Skip to main content
SpringerLink
Log in

The Interface for Cryogenic-Processed Metal/Inp

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Au and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. van de Walle, R.L. Van Meirhaeghe, W.H. Laflère and F. Cardon, J. Appl. Phys., 74, 1885–1889, 1 Aug. 1993.

    Article  Google Scholar 

  2. R. Tyagi, T.P. Chow, J.M. Borrego and K.A. Pisarczyk, Appl. Phys. Lett., 63, 651–653, 2 Aug. 1993.

    Article  CAS  Google Scholar 

  3. P. Muret and D. Elguennouni, Appl. Phys. Lett., 58, 155–157, 14 Jan. 1991.

    Article  CAS  Google Scholar 

  4. H. Hasegawa, SPIE, Vol. 1144, Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices (1989).

  5. S. Kodama, M. Akazawa, H. Fujikura and H. Hasegawa, J. Elec. Mtls., 22, 289–295, 1993.

    Article  CAS  Google Scholar 

  6. Y. Wada and K. Wada, Appl. Phys. Lett., 63, 379–381, 19 July 1993.

    Article  CAS  Google Scholar 

  7. P. Viktorovitch, M. Gendry, S.K. Krawczyk and F. Krafft, Appl. Phys. Lett., 58, 2387–2389, 27 May 1991.

    Article  CAS  Google Scholar 

  8. T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda and J. Shirafuji, Third Intl. Conf. on InP and Related Materials, Cardiff, Wales, 1991.

    Google Scholar 

  9. T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda and J. Shirafuji, J. Elec. Mtls., 20, 1001–1006, 1991.

    Article  CAS  Google Scholar 

  10. T. Sugino, H. Ninomiya, T. Yamada and J. Shirafuji, Appl. Phys. Lett., 60, 1226–1228, 9 Mar. 1992.

    Article  CAS  Google Scholar 

  11. T. Sugino, H. Itoh, A. Boonyasirikool and J. Shirafuji, J. Elec. Mtls., 21, 99–104, 1992.

    Article  CAS  Google Scholar 

  12. C. Debiemme-Chouvy, D. Ballutaud, J.C. Pesant and A. Etcheberry, Appl. Phys. Lett., 62, 2254–2256, 3 May 1993.

    Article  CAS  Google Scholar 

  13. R. Iyer, B. Bollig and D.L. Lile, Third Int’l Conf. on Indium Phosphide and Related Materials, Cardiff, Wales, March 1991.

    Google Scholar 

  14. R. Iyer and D.L. Lile, Appl. Phys. Lett., 59, 437–439, 22 July 1991.

    Article  CAS  Google Scholar 

  15. Y-H. Jeong, J-H. Lee, Y-H. Bae and Y-T. Hong, Appl. Phys. Lett., 57, 2680–2682, 17 Dec. 1990.

    Article  CAS  Google Scholar 

  16. A. Kapila, X. Si and V. Malhotra, Appl. Phys. Lett., 62, 2259–2261, 3 May 1993.

    Article  CAS  Google Scholar 

  17. Z.Q. Shi, R.L. Wallace and W.A. Anderson, Appl. Phys. Lett., 59, 446–448, 22 July 1991.

    Article  CAS  Google Scholar 

  18. Z. Shi and W.A. Anderson, Solid State Electronics, 35, 1427–1432, 1992.

    Article  CAS  Google Scholar 

  19. H.J. Lee, W.A. Anderson, H. Hardtdegen and H. Lüth, Appl. Phys. Lett., 63, pp., 4 Oct. 1993.

    Article  Google Scholar 

  20. Z.Q. Shi and W.A. Anderson, J. Appl. Phys., 72, 3803–3805, 1992.

    Article  CAS  Google Scholar 

  21. Z.Q. Shi, W.A. Anderson, L.P. Fu and A. Petrou, Solid State Electronics, 36, 147–151. 1993.

    Article  CAS  Google Scholar 

  22. Z.Q. Shi and W.A. Anderson, J. Appl. Phys., 70, 3137–3140, 15 Sept. 1991.

    Article  CAS  Google Scholar 

  23. Z.Q. Shi and W.A. Anderson, J. Vac. Sci. and Tech., 711, 985–989, July/Aug. 1993.

    Article  Google Scholar 

  24. H.J. Lee, J. Palmer and W.A. Anderson, Solid State Electronics, submitted.

Download references

Acknowledgments

We recognize the contributions of Peter Bush, Robert Barone and Gary Olson in surface analysis studies. SIMS analysis was conducted at Evans East. Financial support was provided by the National Science Foundation and the project is monitored by Dr. Brian Clifton.

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY, 14260, USA

    L. He, W. A. Anderson & J. Palmer

  2. Emcore Corp., 35 Elizabeth Ave., Somerset, NJ, 08873, USA

    Z. Shi

Authors
  1. L. He
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. W. A. Anderson
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Palmer
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Z. Shi
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

He, L., Anderson, W.A., Palmer, J. et al. The Interface for Cryogenic-Processed Metal/Inp. MRS Online Proceedings Library 318, 141–146 (1993). https://doi.org/10.1557/PROC-318-141

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-318-141

Search

Navigation