Au and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.
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We recognize the contributions of Peter Bush, Robert Barone and Gary Olson in surface analysis studies. SIMS analysis was conducted at Evans East. Financial support was provided by the National Science Foundation and the project is monitored by Dr. Brian Clifton.
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He, L., Anderson, W.A., Palmer, J. et al. The Interface for Cryogenic-Processed Metal/Inp. MRS Online Proceedings Library 318, 141–146 (1993). https://doi.org/10.1557/PROC-318-141