Combined Spin Valve and Anisotropic Magnetoresistance in NiFe/Cu/NiFe Layered Thin Films

MRS Online Proceedings Library volume 313, pages283–288(1993)Cite this article

Abstract

We present a theoretical study of the combined effect of spin valve and anisotropic magnetoresistance in NiFe/Cu/NiFe layered thin films, using an extended form of the semiclassical Camley and Barnás model for electron transport. The anisotropic magnetoresistance is treated by introducing spin-dependent anisotropic mean free paths in the NiFe layers. From calculations of both magnetoresistance effects as a function of NiFe and Cu thickness, we discuss the validity of a description of the combined effect in terms of a simple summation of spin valve and anisotropic magnetoresistance.

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Affiliations

  1. Eindhoven University of Technology, P.O. Box 513, 5600, MB Eindhoven, The Netherlands

    Th.G.S.M. Rijks & W.J.M. De Jongea

  2. Philips Research Laboratories, P.O. Box 80000, 5600, JA Eindhoven, The Netherlands

    Th.G.S.M. Rijks & R. Coehoornb

Authors
  1. Th.G.S.M. Rijks
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  2. R. Coehoornb
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  3. W.J.M. De Jongea
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Correspondence to Th.G.S.M. Rijks.

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Rijks, T., Coehoornb, R. & De Jongea, W. Combined Spin Valve and Anisotropic Magnetoresistance in NiFe/Cu/NiFe Layered Thin Films. MRS Online Proceedings Library 313, 283–288 (1993). https://doi.org/10.1557/PROC-313-283

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