Investigation of Misfit Dislocation Configurations in MBE-Grown InGaAs Layers on Misaligned GaAs (001) Substrates

Abstract

The configurations of misfit dislocations in In0.2Ga0.8As/GaAs(001) hetero structures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110],,, [210] and [010] directions at angles between 0° and 10°. Only in the 40 nm thick layers networks of 60° and 90° dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0° and 4° the changes in dislocation density can be explained by the different character of α and β dislocations. For a substrate tilting above 6° the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.

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Acknowledgment

The work in Berkeley was supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Science Division, of the U.S.Department of Energy under Contract No. DE-AC03-76SF00098. The work in Sandia was supported by the Department of Energy under the Contract number DE-AC04-76DP00789. The use of the facility at the National Center for Electron Microscopy at the Lawrence Berkeley Laboratory is appreciated. P.W. also wants to thank the Alexander von Humboldt Foundation, Germany, for providing him with financial support during his stay as a visiting scientist at LBL Berkeley.

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Werner, P., Zakharov, N.D., Chen, Y. et al. Investigation of Misfit Dislocation Configurations in MBE-Grown InGaAs Layers on Misaligned GaAs (001) Substrates. MRS Online Proceedings Library 283, 811–814 (1992). https://doi.org/10.1557/PROC-283-811

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