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A New Annealing Method to Obtain High Quality Poly-Si

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Abstract

A new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing

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Acknowledgements

The authors would like to thank Dr. J. Y. Lee and Dr. S. Nam for TEM oberservation, and Y. K. Bae for sample processing.

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Authors and Affiliations

  1. Electronics and Telecommunications Research Institute, P.O. Box 8, Daedog Science Town, Daejeon, Korea

    Yoon-Ho Song, Jong-Tae Baek, Kee-Soo Nam & Sang-Won Kang

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  1. Yoon-Ho Song
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  2. Jong-Tae Baek
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  3. Kee-Soo Nam
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  4. Sang-Won Kang
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Song, YH., Baek, JT., Nam, KS. et al. A New Annealing Method to Obtain High Quality Poly-Si. MRS Online Proceedings Library 283, 745–750 (1992). https://doi.org/10.1557/PROC-283-745

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