Abstract
Phase transition between crystalline and amorphous states was studied through 30ns-pulsed XeCl laser induced melting of silicon films. Crystallization occurs through interface controlled growth for laser energy above surface melting threshold. Grain size is smaller than 100nm because of short melt duration (<80ns). Amorphization is observed in silicon films thinner than 40nm when the silicon films are completely melted then solidified homogeneously. The amorphized films have a large defect density (~1020 cm−3 eV−1), which is remarkably reduced by hydrogen plasma treatment for 1 minute. This paper also discusses the application to fabrication of thin film transistors with a high carrier mobility (>100cm2/Vs) at a low temperature of 250°C.
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Sameshima, T. Pulsed-Laser Annealing of Silicon Films. MRS Online Proceedings Library 283, 679–689 (1992). https://doi.org/10.1557/PROC-283-679
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DOI: https://doi.org/10.1557/PROC-283-679