Modeling of Boron Diffusion in Polysilicon-on-Silicon Layers

MRS Online Proceedings Library volume 283, pages653–658(1992)Cite this article

Abstract

In the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for B diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×1016 cm−2 at 70 keV, boron dose of 5×1015 cm−2 at 20 keV).

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References

  1. 1.

    G. L. Patton, J. C. Bravman, and J. D. Plummer, IEEE Trans. Electron Devices ED-33, p. 1754 (1986).

    CAS  Article  Google Scholar 

  2. 2.

    S. E. Hansen, SUPREM III Users Manual, Stanford University (1986).

    Google Scholar 

  3. 3.

    C. P. Ho, J. D. Plummer, S.E. Hansen, and R. W. Dutton, IEEE Trans. on Electron Devices, Vol. ED-30, No. 11, p. 1438 (1983).

    CAS  Article  Google Scholar 

  4. 4.

    B. J. Mulvaney, W. B. Richardson, and T. Crandle, PEPPER 1.2 Users Manual, Microelectronics & Computer Technology Corporation, Austin (1989).

    Google Scholar 

  5. 5.

    P. G. Shewmon, Diffusion in Solids, McGraw-Hill Book Company (1963).

    Google Scholar 

  6. 6.

    H. Schaber, R. V. Criegern, and I. Weitzel, J. Appl. Phys., Vol. 58, No. 11, p. 4036 (1985).

    CAS  Article  Google Scholar 

  7. 7.

    K. Suzuki, T. Fukano, and Y. Kataoka, J. Electrochem. Soc., Vol. 138, No. 7, p. 2201 (1991).

    CAS  Article  Google Scholar 

  8. 8.

    K. Park, S. Batra, S. Banerjee, G. Lux, and R. Manukonda, J. Electrochem. Soc., Vol. 138, No. 2, p 545 (1991).

    CAS  Article  Google Scholar 

  9. 9.

    B. J. Mulvaney, W. B. Richardson, and T. Crandle, IEEE Trans. on Computer-Aided Design, Vol. 8, No. 4 (1989).

    Google Scholar 

Download references

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Affiliations

  1. Microelectronics Research Center, University of Texas, Austin, TX, 78712

    Akif Sultan, Shubneesh Batra, Melvyn Lobo, Keunhyung Park & Sanjay Banerjee

Authors
  1. Akif Sultan
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  2. Shubneesh Batra
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  3. Melvyn Lobo
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  4. Keunhyung Park
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  5. Sanjay Banerjee
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Sultan, A., Batra, S., Lobo, M. et al. Modeling of Boron Diffusion in Polysilicon-on-Silicon Layers. MRS Online Proceedings Library 283, 653–658 (1992). https://doi.org/10.1557/PROC-283-653

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