In the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for B diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×1016 cm−2 at 70 keV, boron dose of 5×1015 cm−2 at 20 keV).
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
G. L. Patton, J. C. Bravman, and J. D. Plummer, IEEE Trans. Electron Devices ED-33, p. 1754 (1986).
S. E. Hansen, SUPREM III Users Manual, Stanford University (1986).
C. P. Ho, J. D. Plummer, S.E. Hansen, and R. W. Dutton, IEEE Trans. on Electron Devices, Vol. ED-30, No. 11, p. 1438 (1983).
B. J. Mulvaney, W. B. Richardson, and T. Crandle, PEPPER 1.2 Users Manual, Microelectronics & Computer Technology Corporation, Austin (1989).
P. G. Shewmon, Diffusion in Solids, McGraw-Hill Book Company (1963).
H. Schaber, R. V. Criegern, and I. Weitzel, J. Appl. Phys., Vol. 58, No. 11, p. 4036 (1985).
K. Suzuki, T. Fukano, and Y. Kataoka, J. Electrochem. Soc., Vol. 138, No. 7, p. 2201 (1991).
K. Park, S. Batra, S. Banerjee, G. Lux, and R. Manukonda, J. Electrochem. Soc., Vol. 138, No. 2, p 545 (1991).
B. J. Mulvaney, W. B. Richardson, and T. Crandle, IEEE Trans. on Computer-Aided Design, Vol. 8, No. 4 (1989).
About this article
Cite this article
Sultan, A., Batra, S., Lobo, M. et al. Modeling of Boron Diffusion in Polysilicon-on-Silicon Layers. MRS Online Proceedings Library 283, 653–658 (1992). https://doi.org/10.1557/PROC-283-653