Growth of Polycrystalline Silicon Films at Low Temperature by Remote Plasma CVD

MRS Online Proceedings Library volume 283, pages635–640(1992)Cite this article

Abstract

We studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330”C.

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Acknowledgement

This work was supported by the HDTV program in Korea and the Korea Science and Engineering Foundation through the SPRC.

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Affiliations

  1. Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul, 130-701, Korea

    Sung Chul Kim, Kyu Chang Park, Sung Ki Kim, Jung Mok Jun & Jin Jang

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  1. Sung Chul Kim
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  2. Kyu Chang Park
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  3. Sung Ki Kim
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  4. Jung Mok Jun
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  5. Jin Jang
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Kim, S.C., Park, K.C., Kim, S.K. et al. Growth of Polycrystalline Silicon Films at Low Temperature by Remote Plasma CVD. MRS Online Proceedings Library 283, 635–640 (1992). https://doi.org/10.1557/PROC-283-635

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