Poly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.
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The authors are grateful to Mr. Tashiro for his help to the electric measurement and Mr. Miyasato for his help to the preparation of samples. This work is partially supported by 1991 Hoso-Bunka foundation, 1991 foundation of Tchugoku Electric Power Supply Co. and 1992 Grant-in-Aid for Scientific Research from Ministry of Education and Culture in Japan.
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Matsumura, H., Hosoda, Y. & Furukawa, S. Properties and Production Mechanism of Low-Temperature Deposited cat-CVD Poly-Silicon Films. MRS Online Proceedings Library 283, 623–628 (1992). https://doi.org/10.1557/PROC-283-623