Carrier Transport through Grain Boundaries in Hydrogenated Microcrystalline Silicon

Abstract

To analyse the influence of the grain boundaries (gb) on the transport of carriers in hydrogenated microcrystalline silicon (μc-Si:H) the ambipolar diffusion length (Lamb) was measured by SSPG. In addition, the films were characterised by photo-conductivity, dark conductivity activation energy, Urbach energy (determined by CPM), hydrogen effusion, Raman spectroscopy, X-ray scattering and optical transmission.

The sample series was prepared by PECVD of SiH4 diluted with increasing H2 content. Taking the structural information by Raman spectra and X-ray into account, we explain our optical and activation energy measurements within a three-phase-model (amorphous phase, crystalline phase, gb) and a Fermi level pinning in μc-Si:H.

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References

  1. [1]

    S. Usui, H. Kikuchi, J. Non-Cryst. Sol. 34, 1 (1979)

    CAS  Article  Google Scholar 

  2. [2]

    W. E. Spear, P.G. LeComber, Sol. St. Comm. 17, 1193, (1975)

    Article  Google Scholar 

  3. [3]

    J. Kanicki, Ch. 1 in “Amorphous and Microcrystalline Semiconductors: Optoelectronic Devices”, J. Kanicki, ed. (Artech House, London 1991)

  4. [4]

    Y. Mishima, S. Miyazaki, M. Hirose, Y. Osaka, Phil. Mag. B 46, 1 (1982))

    CAS  Article  Google Scholar 

  5. [5]

    G. Baccarani, B. Riccó, G. Spadini, J. Appl. Phys. 49, 5565 (1978)

    CAS  Article  Google Scholar 

  6. [6]

    H. Richter, Z.P. Wang, L. Ley, Sol. St. Comm. 39, 625 (1981)

    CAS  Article  Google Scholar 

  7. [7]

    S. Koynov, J. Non-Cryst. Sol. 137&138, 649 (1991)

    Article  Google Scholar 

  8. [8]

    W. Beyer, J. Non-Cryst. Sol. 97&98, 1027 (1987)

    Article  Google Scholar 

  9. [9]

    F. Wang, R. Schwarz, S. Grebner, H.N. Liu, Y.L. He, C.Z. Yin, ICPS 21 Proc., Bejing (1992)

    Google Scholar 

  10. [10]

    S. Veprek, Z. Iqbal, R.O. Kühne, P. Capezzuto, F.-A. Sarott, J.K. Gimzewski, Sol. St. Phys. 16, 6241 (1983)

    CAS  Article  Google Scholar 

  11. [11]

    S. Komuro, Y. Aoyagi, Y. Segawa, S. Namba, A. Masuyama, A. Matsuda, K. Tanaka, J. Appl. Phys. 56, 1658 (1984)

    CAS  Article  Google Scholar 

  12. [12]

    W.C. Dash, R.C. Newman, Phys. Rev. 99, 1151 (1955)

    CAS  Article  Google Scholar 

  13. [13]

    M. Heintze, Diss. Univ. Dundee (1986)

    Google Scholar 

  14. [14]

    C.H. Seager, T.G. Castner, J. Appl. Phys. 49, 3879 (1978)

    CAS  Article  Google Scholar 

Download references

Acknowledgements

We thank R. Schorer at the Walter-Schottky-Institut, Munich for the Raman measurements and G. Zorn from Siemens AG, Neuperlach for the X-ray measurements.

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Grebner, S., Wang, F. & Schwarz, R. Carrier Transport through Grain Boundaries in Hydrogenated Microcrystalline Silicon. MRS Online Proceedings Library 283, 513–518 (1992). https://doi.org/10.1557/PROC-283-513

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