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Carrier Transport through Grain Boundaries in Hydrogenated Microcrystalline Silicon

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Abstract

To analyse the influence of the grain boundaries (gb) on the transport of carriers in hydrogenated microcrystalline silicon (μc-Si:H) the ambipolar diffusion length (Lamb) was measured by SSPG. In addition, the films were characterised by photo-conductivity, dark conductivity activation energy, Urbach energy (determined by CPM), hydrogen effusion, Raman spectroscopy, X-ray scattering and optical transmission.

The sample series was prepared by PECVD of SiH4 diluted with increasing H2 content. Taking the structural information by Raman spectra and X-ray into account, we explain our optical and activation energy measurements within a three-phase-model (amorphous phase, crystalline phase, gb) and a Fermi level pinning in μc-Si:H.

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Acknowledgements

We thank R. Schorer at the Walter-Schottky-Institut, Munich for the Raman measurements and G. Zorn from Siemens AG, Neuperlach for the X-ray measurements.

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Authors and Affiliations

  1. Physics Department E16, Technical University of Munich, James-Franck-Str., W-8046, Garching, Germany

    S. Grebner, F. Wang & R. Schwarz

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  1. S. Grebner
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  2. F. Wang
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  3. R. Schwarz
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Grebner, S., Wang, F. & Schwarz, R. Carrier Transport through Grain Boundaries in Hydrogenated Microcrystalline Silicon. MRS Online Proceedings Library 283, 513–518 (1992). https://doi.org/10.1557/PROC-283-513

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