We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p—type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion—implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current—voltage (I—V) curves has been observed.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
L.T. Canham, Appl. Phys. Lett., 57, 1046, (1990).
D.I. Bilenko, N.P. Aban’shin, Yu.N. Galishnikova, G.E. Markelova, LB. Mysenko, and E.I. Khasina, Sov. Phys. Semicond., 17, 1336, (1983).
M.I.J. Beale, J.D. Benjamin, M.J. Uren, N.G. Chew, and A.G. Cullis, J. Crystal Growth, 73, 622, (1985).
R.C. Anderson, R.S. Muller, and C.W. Tobias, J. Electrochem. Soc. 138, 3406, (1991).
N. Koshida and H. Koyama, Appl. Phys. Lett., 60, 347, (1992).
F. Namaver, H.P. Maruska, and N.M. Kalkhoran, Appl. Phys. Lett., 60, 2514, (1992).
About this article
Cite this article
Yeh, C.C., Hsu, K.Y.J., Chen, P.C. et al. Study on The Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon. MRS Online Proceedings Library 283, 401–404 (1992). https://doi.org/10.1557/PROC-283-401