Study on The Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon

Abstract

We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p—type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion—implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current—voltage (I—V) curves has been observed.

This is a preview of subscription content, access via your institution.

References

  1. [1].

    L.T. Canham, Appl. Phys. Lett., 57, 1046, (1990).

    CAS  Article  Google Scholar 

  2. [2].

    D.I. Bilenko, N.P. Aban’shin, Yu.N. Galishnikova, G.E. Markelova, LB. Mysenko, and E.I. Khasina, Sov. Phys. Semicond., 17, 1336, (1983).

    Google Scholar 

  3. [3].

    M.I.J. Beale, J.D. Benjamin, M.J. Uren, N.G. Chew, and A.G. Cullis, J. Crystal Growth, 73, 622, (1985).

    Article  Google Scholar 

  4. [4].

    R.C. Anderson, R.S. Muller, and C.W. Tobias, J. Electrochem. Soc. 138, 3406, (1991).

    CAS  Article  Google Scholar 

  5. [5].

    N. Koshida and H. Koyama, Appl. Phys. Lett., 60, 347, (1992).

    CAS  Article  Google Scholar 

  6. [6].

    F. Namaver, H.P. Maruska, and N.M. Kalkhoran, Appl. Phys. Lett., 60, 2514, (1992).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Yeh, C.C., Hsu, K.Y.J., Chen, P.C. et al. Study on The Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon. MRS Online Proceedings Library 283, 401–404 (1992). https://doi.org/10.1557/PROC-283-401

Download citation