Abstract
n-Si photoanodes have been found to exhibit photocurrent multiplication during the first seconds of exposure to a fluoride-free, acidic electrolyte. This shows that, in contrast with earlier hypotheses, photocurrent doubling is not directly related to the presence of fluoride in the electrolyte, but rather must arise from an electron injection mechanism associated with the Si-H bonds initially present at the Si surface. It also suggests that the electroluminescence which has been observed during the anodic oxidation of porous silicon most probably stems from the same electron-injection mechanism.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Halimaoui, C. Oules, G. Bomchil, A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon and F. Muller, Appl. Phys. Lett. 59, 304 (1991).
S.R. Morrison, Electrochemistry at semiconductor and oxidized metal electrodes, (Plenum, New York, 1980) Chap. 6, pp. 189–262.
R. Memming and G. Schwandt, Surf. Sci. 4, 109 (1966).
Y Kato, T. Ito and A. Hiraki, Jpn. J. Appl. Phys. 27, L1406 (1988).
P. Gupta, V.L. Colvin and S.M. George, Phys. Rev. B, 37, 8234 (1988).
A. Venkateswara Rao, F. Ozanam and J.-N. Chazalviel, J. Electrochem. Soc. 138, 153 (1991).
M. Matsumura and S.R. Morrison, J. Electroanal. Chem. 147, 157 (1983).
J. Stumper, H.J. Lewerenz and C. Pettenkofer, Electrochim. Acta 34, 1379 (1989).
H. Gerischer, Electrochim. Acta 35, 1677 (1990).
J.-N. Chazalviel, Surf. Sci. 88, 204 (1979).
H. Gerischer and M. Lübke, Ber. Bunsenges Phys. Chem. 92, 573 (1988).
J.-N. Chazalviel, M. Stefenel and T.B. Truong, Surf. Sci. 134, 865 (1983).
N.J. Harrick and K.H. Beckmann, in Characterization of Solid Surfaces, edited by P.F. Kane and G.R. Larrabee (Plenum, New York, 1974), p. 243.
H. Ubara, T. Imura and A. Hiraki, Solid State Comm. 50, 673 (1984).
A. Tardella and J.-N. Chazalviel, Appl. Phys. Lett. 47, 334 (1985).
E. Yablonovitch, D.L. Allara, C.C. Chang, T. Gmitter and T.B. Bright, Phys. Rev. Lett. 57, 249 (1986).
V.A. Burrows, Y.J. Chabal, G.S. Higashi, K. Raghavachari and S.B. Christman, Appl. Phys. Lett. 53, 998 (1988).
F. Ozanam and J.-N. Chazalviel, J. Electroanal. Chem. 269, 251 (1989).
J.-N. Chazalviel, J. Electroanal. Chem. 233, 37 (1987).
A. Halimaoui, Thèse de Doctorat d’Etat, Université de Grenoble I (1991).
J.-N. Chazalviel, Electrochim. Acta 37, 865 (1992).
D.J. Blackwood, A. Borazio, R. Greef, L.M. Peter and J. Stumper, Electrochim. Acta 37, 889 (1992).
V. Lehmann and U. Gosele, Appl. Phys. Lett. 58, 856 (1991).
J.-C. Vial (private communication).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chazalviel, JN., Ozanam, F. Mechanism of Electron Injection during the Anodic Oxidation of Silicon. MRS Online Proceedings Library 283, 359–364 (1992). https://doi.org/10.1557/PROC-283-359
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-283-359