Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition


Electrical conductivity measurements were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000 °C to gain a better understanding of the CVD growth process and the resulting electrical properties of the diamond film's. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, and this is attributed to decreasing hydrogen incorporation efficiencies at further distances from the plasma.

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This research was financially supported in part by SOlO/IST through ONR and the Kobe Steel, Ltd. Professorship at NCSU.

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Correspondence to Brian R. Stoner or Jesko A. von Windheim or Jeffrey T. Glass or Danny Zoltan or Jan W. Vandersande.

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Stoner, B.R., von Windheim, J.A., Glass, J.T. et al. Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition. MRS Online Proceedings Library 270, 413–418 (1992). https://doi.org/10.1557/PROC-270-413

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