In-Vacuo Surface Analytical Study of Diamond Nucleation on Copper Vs. Silicon

Abstract

A study was performed on polycrystalline copper versus that of Si(100) utilizing a negative substrate bias to enhance diamond nucleation. The biasing pretreatment and subsequent growth of the diamond were performed via microwave plasma chemical vapor deposition and the initial stages of nucleation were characterized by in-vacuo surface analysis. The biasing pretreatment step proved to have a tremendous influence on the nucleation density pertaining to Si(100) substrates, however, the nucleation density on polycrystalline copper was only increased slightly. A highly graphitic surface coverage of roughly 10Å was evident on the copper substrates prior to the detection of diamond and was quite stable in thickness in as early as 15 minutes of biasing. The Si(100) substrates, however, were characterized by the formation of a carbide with some form of nondiamond carbon present on the surface throughout the biasing pretreatment.

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Acknowledgement

The authors would like to acknowledge the financial support of SDIO/IST through ONR and also Kobe Steel, Ltd.

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Correspondence to S. D. Wolter or B. R. Stoner or G.-H. M. Ma or J. T. Glass.

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Wolter, S.D., Stoner, B.R., Ma, GH.M. et al. In-Vacuo Surface Analytical Study of Diamond Nucleation on Copper Vs. Silicon. MRS Online Proceedings Library 270, 347–352 (1992). https://doi.org/10.1557/PROC-270-347

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