Diamond Growth in an Oxy-Acetylene Flame by an Alternating Gas Ratio Technique

Abstract

Diamond films were grown using a computer controlled oxy-acetylene torch that allowed precise programming of O2 and C2H2 gas profiles. This enabled more accurate control of the diamond growth chemistry. With this torch, systematic and complex variations in gas chemistry were applied during growth and the resulting film morphology and film quality was investigated. Plan view scanning electron microscopy (SEM) revealed predominately (111) faceting as a result of a sawtooth variation in the O2:C2H2 gas ratio from 0.97 to 1.00. Raman spectroscopy indicated mostly sp3 bonding, with little non-diamond component present. Furthermore, crosssectional SEM showed small grains during normal growth (O2:C2H2 = 0.97), whereas grain size increased significantly after onset of a sawtooth variation in the gas ratio.

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Acknowledgement

This research was supported by SDIO/IST through the Office of Naval Research and a National Science and Engineering Research Council of Canada postdoctoral fellowship. The authors would also like to thank Dr. Xiao Hong Wang for her assistance with the Raman spectroscopy and Kobe Steel Ltd. Electronic Materials Center for the use of the scanning electron microscope.

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Correspondence to F. R. Sivazlian or J. A. von Windheim or J.T. Glass.

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Sivazlian, F.R., von Windheim, J.A. & Glass, J. Diamond Growth in an Oxy-Acetylene Flame by an Alternating Gas Ratio Technique. MRS Online Proceedings Library 270, 329–334 (1992). https://doi.org/10.1557/PROC-270-329

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