Dry Etching of Copper at High Rates

Abstract

Three new methods for dry etching of copper at temperatures below 200°C have been developed. The first relies on the formation of volatile CICu(PR3)2 species via reaction of PR3 with CuCI where R = ethyl, and butyl. The second relies on the reaction of Cu(hfac)2 and neutral ligands L such as butyne, pentyne or bistrimethylsilylacetylene to form (hfac)CuL. The last approach involves reaction of CuO with hexafluoroacetylacetone (hfacH) to form Cu(hfac)2 and water. These approaches have provided etch rates as high as 1 μm/min at 150°C.

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References

  1. 1.

    P.C. Pai, C.H. Ting, in VLSI V, (Mater. Res. Soc. Symp. Proc. 1990) p. 359.

    Google Scholar 

  2. 2.

    H.K. Shin, M.J. Hampden-Smith, T.T. Kodas, and E.N. Duesler in Chemical Perspectives of Electronic Materials II, (Mat. Res. Soc. Symp.Proc., 204, 1991) p. 61

    Google Scholar 

  3. 3.

    H.K. Shin, K.M. Chi, M. Hampden-Smith, T.T. Kodas, J. Farr, and M. Paffett, Angew. Chem., Advanced Materials, 3, 246, (1991).

    CAS  Google Scholar 

  4. 4.

    H. F. Winters, J. Vac. Sci. Technol. A3, 786 (1985).

    Article  Google Scholar 

  5. 5.

    W. Sesselmann, T. J. Chuang, Surface Sci. 176, 32, (1986).

    CAS  Article  Google Scholar 

  6. 6.

    W. Sesselmann, T. J. Chuang, Surface Sci. 176, 67, (1986).

    Article  Google Scholar 

  7. 7.

    S. Broydo, Solid State Technol., 26, 159, (1983).

    CAS  Google Scholar 

  8. 8.

    P. Gulde, C. Scholtz, U.S. Patent No. 4 838 994, (June 13, 1989).

  9. 9.

    G.C. Schwartz, P.M. Schaible, J. Electrochem. Soc. 130, 1777 (1983).

    CAS  Article  Google Scholar 

  10. 10.

    P.M. Schaible, G.C. Schwartz, U.S. Patent No. 4 352 716 (1982).

  11. 11.

    B. J. Howard, S.K. Wolterman, W.J. Yoo, B. Gittleman, and C.H. Steinbruchel in Surface Chemistry and Beam-Solid Interactions. (Mat. Res. Soc. Symp. Proc., 201, 1991) p. 129.

    CAS  Google Scholar 

  12. 12.

    F. Druschke, G. Kraus, U. Kuenzel, W. D. Ruth, R. Schaefer; U.S. Patent No. 4 557 796, (December 10, 1985).

  13. 13.

    R. C. Bausmith, W. J. Cote, J. C. Cronin, K. L. Holland, C. W. Kaanta, P. P. Lee, T. M. Wright; U.S. Patent No. 4 919 750 (April 24, 1990).

  14. 14.

    A. T. J. Norman, B.A. Muratore, P.N. Dyer, D. A. Roberts, A.K. Hochberg, J. de Physique, to be published (1992).

    Google Scholar 

  15. 15.

    F. Rousseau, A. Jain, M. J. Hampden-Smith, T. T. Kodas, Chem. Mater., submitted for publication, 1992.

    Google Scholar 

Download references

Acknowledgement

TTK acknowledges the support of a National Science Foundation Presidential Young Investigator Grant #CTS-9059538. MHS thanks the NSF chemical instrumentation program for purchase of a low field NMR spectrometer.

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Correspondence to Toivo T. Kodas.

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Farkas, J., Rousseau, F., Chi, KM. et al. Dry Etching of Copper at High Rates. MRS Online Proceedings Library 236, 507–510 (1991). https://doi.org/10.1557/PROC-236-507

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