The effects of pulsed laser irradiation on silicon (111) single crystal thin samples were studied in a ultra-high vacuum transmission electron microscope. Samples were found to cleave along (110) planes under the laser beam. The formation of dislocation networks was also observed. The cleaving did not seem to originate from previously observed defect areas, but from random places, and is believed to be caused by thermal shock from laser beam heating. Bulk defects in the specimens, such as stacking fault tetrahedra and dislocations, were not observed to be affected by the laser treatment.
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Savage, T.S., Dunn, D. & Marks, L.D. Uhv-Tem Studies of Laser-Induced Damage in Silicon. MRS Online Proceedings Library 236, 495–500 (1991). https://doi.org/10.1557/PROC-236-495