Low Temperature UV Growth of SiO2 in O2 and N2O

MRS Online Proceedings Library volume 236, pages371–376(1991)Cite this article

Abstract

We report here the use of a low pressure Hg lamp to grow oxide layers on Si in N 2O and O2. Layer thicknesses up to 100Å, whose IR absorption characteristics are similar to those exhibited by thermal oxides, have been produced. Preliminary modelling of the process is described.

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Reference

  1. 1.

    G.A. Sai-Halasz, M.R. Wordeman, D.P. Kevn, E. Ganin, O.S. Rishton, D.S. Zicherman, H. Schmid, M.R. Polcaris, H.Y. Ng, P.J. Restle, T.H.P. Chang and R.H. Dennard, IEEE.Elec. Dev. Lett., E.D.L. 8,463 (1987)

    Article  Google Scholar 

  2. 2.

    R.B. Fair and G.A. Ruggles, Solid. State Tech., 33, No 5, 107 (1990)

    CAS  Google Scholar 

  3. 3.

    S.M. Sze, VLSI technology Technology (McGraw-HillNew York, 1989) p 1.

    Google Scholar 

  4. 4.

    G. T. Salbert, D. K. Reinhard, and J. Asmussen, J. Vac. Sci. Technol, A 8 (3), 2919 (1990)

    Article  Google Scholar 

  5. 5.

    S. Kimura, E. Murakami, K. Miyake, T. Warabisako, H. Sunami, and T. Tokuyama, J. Vac. Sci. Technol., A(2), 1460 (1984)

    Google Scholar 

  6. 6.

    J.S. Herman, F.L. Terry. IEEE.Elec.Dev.Lett, ED12, 236 (1991)

    Article  Google Scholar 

  7. 7.

    E. Fogarassy, C.W. White, A. Slaoui, C. Fuchs, P. Siffert and S.J. Pennycook Appl Phys Lett. 53, 1720 (1988)

    CAS  Article  Google Scholar 

  8. 8.

    M. Morita, S. Aritome, T. Tanaka and M. Hirose. Appl.Phys.Lett, 49, 699 (1989)

    Article  Google Scholar 

  9. 9.

    S.V. Nguyen, D. Dobuzinski, D. Dopp, R. Gleason, M. Gibson and S. Fridmann, Thin Solid Films. 194, 595 (1990)

    Article  Google Scholar 

  10. 10.

    A. Kazor and I. W. Boyd, Appl.Surf.Sci. (To be published, 1992)

    Google Scholar 

  11. 11.

    A. Kazor and I. W. Boyd, Electron.Lett. 27, 909 (1991)

    CAS  Article  Google Scholar 

  12. 12.

    I.W. Boyd and J.I.B. Wilson, Appl.Phys.Lett 53, 4166 (1982)

    CAS  Google Scholar 

  13. 13.

    A. Goodman and J.M. Breece, J. Electrochem. Soc. 117, 983 (1970)

    Article  Google Scholar 

  14. 14.

    N. Cabrera and N.F. Mott, Rep. Progr.Phys. 12, 163–184 (1948)

    Article  Google Scholar 

  15. 15.

    B.E. Deal and A.S. Grove, J. Appl. Phys. 36, 3770 (1965)

    CAS  Article  Google Scholar 

  16. 16.

    E.M. Young and W.A. Tiller, Appl.Phys.Lett. 50, 46 (1987)

    CAS  Article  Google Scholar 

  17. 17.

    P. Quenon, M. Wautelet and M. Dumont, J.Appl.Phys, 61, 3112 (1986)

    Article  Google Scholar 

  18. 18.

    A.M. Goodman, Phys.Rev. 152, 27851966

    Google Scholar 

  19. 19.

    R. Williams, Phys.Rev. 140, 2A A5691965

    Article  Google Scholar 

  20. 20.

    Y. Yasuda, S. Zaima, T. Kaida and Y. Koide, J. Appl. Phys. 67, 2603 (1990)

    CAS  Article  Google Scholar 

  21. 21.

    D. Shaw “Atomic Diffusion in Semiconductors” (Plenum, London 1973) p.590

    Google Scholar 

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Acknowledgement

We would like to thank Dr N Ross for providing the infrared spectrum of our samples, Prof M Green for the use of the single wavelength ellipsometer and the technical support group for technical assistance, This work was funded in part by SERC (GR/F 02229) and by EEC/SCIENCE initiative.

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  1. Electronic & Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK

    Asghar Kazor & Ian W. Boyd

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  1. Asghar Kazor
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  2. Ian W. Boyd
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Correspondence to Asghar Kazor.

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Kazor, A., Boyd, I.W. Low Temperature UV Growth of SiO2 in O2 and N2O. MRS Online Proceedings Library 236, 371–376 (1991). https://doi.org/10.1557/PROC-236-371

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