Low Temperature UV Growth of SiO2 in O2 and N2O

Abstract

We report here the use of a low pressure Hg lamp to grow oxide layers on Si in N 2O and O2. Layer thicknesses up to 100Å, whose IR absorption characteristics are similar to those exhibited by thermal oxides, have been produced. Preliminary modelling of the process is described.

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Acknowledgement

We would like to thank Dr N Ross for providing the infrared spectrum of our samples, Prof M Green for the use of the single wavelength ellipsometer and the technical support group for technical assistance, This work was funded in part by SERC (GR/F 02229) and by EEC/SCIENCE initiative.

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Correspondence to Asghar Kazor.

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Kazor, A., Boyd, I.W. Low Temperature UV Growth of SiO2 in O2 and N2O. MRS Online Proceedings Library 236, 371–376 (1991). https://doi.org/10.1557/PROC-236-371

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