Effect of Annealing on the Dielectric Properties and Microstructure of Tantalum Oxide T14in Films


Effects of heat treatments on the dielectric properties of tantalum oxide thin films(250Å) deposited on the p-Si substrates by RF reactive sputtering were investigated. The leakage current density was considerably reduced from 10-9 to 10-12A/μm2 at an electric field of 2MV/cm after rapid thermal annealing in O2 at 1000°C, while little leakage reduction was observed after annealing at 500°C. p]The structural changes of tantalum oxide thin film after annealing were examined using high resolution transmission electron microscopy. The leakage reduction after annealing can be attributed to crystallization and reoxidation of the amorphous tantalum oxide thin film.

This is a preview of subscription content, access via your institution.


  1. 1.

    S. Seki, T. Vnagami, O. Kogure, and B. Tsujiyama, J. Vac. Sci. Technol. A, 5, 1771 (1987)

    CAS  Article  Google Scholar 

  2. 2.

    S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, and R. Doering, J. Appl. Phys., 65(3), 1140 (1989)

    CAS  Article  Google Scholar 

  3. 3.

    M. Saitoh, T. mori, and H. Tamura, Tech. Digest of '86 IEDM, 680 (1986)

  4. 4.

    H. Shinriki, M. Nakata, Y. Nishioka and K. Mukai, Digest of Symp. on VLSI Technology, 25–26 (1989)

  5. 5.

    C. Isobe and M. Saitoh, Appl. Phys. Lett., 56(10), 907–909 (1990)

    CAS  Article  Google Scholar 

  6. 6.

    J.P. Benedict, S.J. Klepeis, W.G. Vandygrift, and Ron Anderson, EMSA Bulletin 19:2 November, 74–79 (1989)

Download references

Author information



Corresponding author

Correspondence to Chang Hwan Chun.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Chun, C.H., Kim, G.H. & Yi, KS. Effect of Annealing on the Dielectric Properties and Microstructure of Tantalum Oxide T14in Films. MRS Online Proceedings Library 230, 357–362 (1992). https://doi.org/10.1557/PROC-230-357

Download citation