Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

Abstract

Significant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

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Chang, Y., Sigmon, T.W. Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs. MRS Online Proceedings Library 230, 263–268 (1992). https://doi.org/10.1557/PROC-230-263

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