Halogen lamps are used to anneal implanted GaAs. Surface protection is obtained by mouting the substrate in a sandwiched configuration between a silicon and a quartz plate. Raman scattering measurements are carried out to follow simultaneously lattice reconstruction and surface degradation due to Arsenic loss. The evolution of the Raman spectra is compared to a T.E.M. analysis carried out on the same samples.
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Nissim, Y.I., Joukoff, B., Sapriel, J. et al. Annealing of High Dose Implanted GaAs with Halogen Lamps. MRS Online Proceedings Library 23, 675–679 (1983). https://doi.org/10.1557/PROC-23-675