Abstract
Halogen lamps are used to anneal implanted GaAs. Surface protection is obtained by mouting the substrate in a sandwiched configuration between a silicon and a quartz plate. Raman scattering measurements are carried out to follow simultaneously lattice reconstruction and surface degradation due to Arsenic loss. The evolution of the Raman spectra is compared to a T.E.M. analysis carried out on the same samples.
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M. Arai, K. Nishiyama and N. Watanabe, Jap. J. of Appl. Phys. 20 (1981) L124
M. Kuzuhara, H. Kohzu and Y. Takayama, Appl. Phys. Lett. 41, (1982) 755
R.L. Chapman, J.C.C. Fan, J.P. Donnelly and B.Y. Tsaur, Appl. Phys. Lett. 40 (1982) 805
Y.I. Nissim, B. Joukoff, J. Sapriel and N. Duhamel, J. de Physique C5, supplément 10, (1983) 247
G.P. Schwartz, J.E. Griffiths, D. Distefano, G.J. Gualtieri and B. Schwartz, Appl. Phys. Lett. 34 (1979) 742
J. Sapriel and Y.I. Nissim in these proceedings
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Nissim, Y.I., Joukoff, B., Sapriel, J. et al. Annealing of High Dose Implanted GaAs with Halogen Lamps. MRS Online Proceedings Library 23, 675–679 (1983). https://doi.org/10.1557/PROC-23-675
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DOI: https://doi.org/10.1557/PROC-23-675