GaAs SOI consisting of a sputtered GaAs film on a SiO2-Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.
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Xiqiang, L., Zhihao, C., Ciienglu, L. et al. Preparation of GaAs SOI and its Laser Recrystallization. MRS Online Proceedings Library 23, 621–626 (1983). https://doi.org/10.1557/PROC-23-621