Preparation of GaAs SOI and its Laser Recrystallization


GaAs SOI consisting of a sputtered GaAs film on a SiO2-Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.

This is a preview of subscription content, access via your institution.


  1. 1.

    B.R. Appleton and G.K. Celler (editors), Laser and Electron-Beam Interaction with Solids, 1981 M.R.S. Symposia Proceedings (North-Holland, New York 1982).

    Google Scholar 

  2. 2.

    Y. Segui, F. Casrere and A. Bui, Thin Solid Films, 92, 303 (1982).

    CAS  Article  Google Scholar 

  3. 3.

    L. Alimonssas, H. Carchano and J.P. Thomas, J. Phys., Colloq. (C1), 341 (1982).

    Google Scholar 

  4. 4.

    N. Tsukada, S. Sugata and Y. Mita, Appl. Phys. Letters, 42(5), 424 (1983).

    CAS  Article  Google Scholar 

  5. 5.

    J.C.C. Fan, R.L. Chapman, J.P. Donnelly, G.W. Turner and C.O. Bozler, Laser and Electron Beam Solid Interactions and Materials Processing (J.F. Gibbons, L.D. Hess and T.W. Sigmon, editors), M.R.S. Symposia Proceedings (North-Holland, New York 1981), pp.261.

  6. 6.

    S.C. Tsou, W.Y. Wang, C.L. Lin and G.Q. Xia, Ion Implantation: Equipment and Techniques (H. Rysel and H. Glawisching, editors), Springer Series in Electro-Physics, 11, 538 (1983).

    CAS  Google Scholar 

  7. 7.

    K. Okamoto and T. Imai, Appl. Phys. Letters, 42(11), 972 (1983).

    CAS  Article  Google Scholar 

  8. 8.

    X.Q. Li and B.Y. Sun, Luminescence and Display Devices, No.1, 53 (1983).

    Google Scholar 

  9. 9.

    T.J. Stultz and J.F. Gibbons, in ref. 1, pp.499.

  10. 10.

    D.M. Zehner, C.W. White, B.R. Appleton and G.W. Ownby, in ref. 1, pp.683.

  11. 11.

    N.M. Johnson, D.K. Biegelsen and M.D. Moyer, Appl. Phys. Letters, 38, 900 (1981).

    CAS  Article  Google Scholar 

  12. 12.

    K.K. Ng, G.K. Celler, E.I. Povilonis, R.C. Frye, H.J. Leamy and S.M. Sze, IEEE Electron Device Lett., EDL-2, 316 (1981).

    CAS  Article  Google Scholar 

Download references

Author information



Rights and permissions

Reprints and Permissions

About this article

Cite this article

Xiqiang, L., Zhihao, C., Ciienglu, L. et al. Preparation of GaAs SOI and its Laser Recrystallization. MRS Online Proceedings Library 23, 621–626 (1983).

Download citation