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Preparation of GaAs SOI and its Laser Recrystallization

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Abstract

GaAs SOI consisting of a sputtered GaAs film on a SiO2-Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.

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Authors and Affiliations

  1. Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China

    Li Xiqiang, Chen Zhihao, Lin Ciienglu & Wang Weiyuan

Authors
  1. Li Xiqiang
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  2. Chen Zhihao
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  3. Lin Ciienglu
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  4. Wang Weiyuan
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Xiqiang, L., Zhihao, C., Ciienglu, L. et al. Preparation of GaAs SOI and its Laser Recrystallization. MRS Online Proceedings Library 23, 621–626 (1983). https://doi.org/10.1557/PROC-23-621

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  • DOI: https://doi.org/10.1557/PROC-23-621

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