A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

Abstract

N-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

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References

  1. 1.

    K. F. Lee, J. F. Gibbons, and K. C. Sawaswat, Appl. Phys. Lett., 35, 173 (1979).

    CAS  Google Scholar 

  2. 2.

    A. F. Tasch, T. C. Holloway, K. F. Lee, and J. F. Gibbons, Electron Lett., 15, 435 (1979).

    CAS  Article  Google Scholar 

  3. 3.

    T. I. Kamins, K. F. Lee, J. F. Gibbons, and K. C. Sawaswat, IEEE Trans. Electron Devices, ED-27, 298 (1980).

    Google Scholar 

  4. 4.

    H. W. Lam, A. F. Tasch, and T. C. Holloway, IEEE Electron Device Lett., EDL-1, 206 (1980).

    CAS  Google Scholar 

  5. 5.

    H. S. Lee, Appl. Phys. Lett., 38, 770 (1981).

    CAS  Google Scholar 

  6. 6.

    H. S. Lee, Solid-state Electron., 24, 1059 (1981).

    CAS  Google Scholar 

  7. 7.

    K. K. Ng, G. K. Cellar, E. I. Povilonis, R. C. Frye, H. J. Leamy, and S. M. Sze, IEEE Electron Device Lett., EDL-2, 316 (1981).

    CAS  Google Scholar 

  8. 8.

    H. Baudrand, E. Hamadto, and J. L. Amalic, Solid-state Electron., 24, 1093 (1981).

    CAS  Google Scholar 

  9. 9.

    R. C. Frye and K. K. Ng, in: Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager (North-Holland, New York, 1982) p. 275.

  10. 10.

    J. Y. W. Seto, J. Appl. Phys., 46, 5247 (1975).

    CAS  Google Scholar 

  11. 11.

    C. M. Wu and E. S. Yang, Appl. Phys. Lett., 40, 49 (1982).

    CAS  Google Scholar 

  12. 12.

    A. Waxman, V. E. Henrich, F. V. Shallcross, H. Brokan, and P. K. Weimer, J. Appl. Phys., 36, 168 (1965).

    CAS  Google Scholar 

  13. 13.

    A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, Chap. 11.

    Google Scholar 

  14. 14.

    E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982, Chap. 4.

    Google Scholar 

  15. 15.

    S. C. Sun and J. D. Plummer, IEEE Electron Devices, ED-27, 1497 (1980).

    CAS  Google Scholar 

  16. 16.

    B. Y. Tsaur, J. C. C. Fan, M. W. Geis, D. J. Silversmith, and R. W. Mountain, Technical Digest, International Electron Devices Meeting, 1981, p. 232.

    Google Scholar 

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Acknowledgments

I would like to thank Ms. L. C. Puzio for her help in scattering factor computation. Helpful discussion with Dr. J. C. Erskine is also appreciated.

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Lee, HS. A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors. MRS Online Proceedings Library 23, 603–608 (1983). https://doi.org/10.1557/PROC-23-603

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