Silicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 urn thick SiO2 isolating layers on 4” diameter Si<100> wafers, with stripe openings of 5 to 100 μm width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≤ 50 μm spacing between seed openings.
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The contributions of B. L. Draper in mask and wafer preparation were essential. The technical assistance of R. E. Asbill is also gratefully acknowledged.
This work performed at Sandia National Laboratories supported by the US Department of Energy under contract number DE-AC04-76DP00789.
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Knapp, J.A., Picraux, S.T. Line-Source E-Beam Crystallization of Silicon-On-Insulator Films. MRS Online Proceedings Library 23, 533–537 (1983). https://doi.org/10.1557/PROC-23-533