Line-Source E-Beam Crystallization of Silicon-On-Insulator Films


Silicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 urn thick SiO2 isolating layers on 4” diameter Si<100> wafers, with stripe openings of 5 to 100 μm width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≤ 50 μm spacing between seed openings.

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The contributions of B. L. Draper in mask and wafer preparation were essential. The technical assistance of R. E. Asbill is also gratefully acknowledged.

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This work performed at Sandia National Laboratories supported by the US Department of Energy under contract number DE-AC04-76DP00789.

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Knapp, J.A., Picraux, S.T. Line-Source E-Beam Crystallization of Silicon-On-Insulator Films. MRS Online Proceedings Library 23, 533–537 (1983).

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