Recrystallization of Polycrystalline Silicon Over SiO2 Through Strip Electron Beam Irradiation

MRS Online Proceedings Library volume 23, pages491–496(1983)Cite this article

Abstract

We have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2 film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a \([\bar 211]\) direction provides better crystal quality than growth in a \([0\bar 11]\) direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed.

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Acknowledgements

The authors wish to thank A. Sawada, T. Tanigaki, Y. Yamoto, K. Hall, T. Avnery, M. Fletcher, and T. Corrao for their valuable discussions and their assistance in the present work.

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Affiliations

  1. Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan

    Y. Hayafuji, T. Yanada, S. Usui, S. Kawado, A. Shibata, N. Watanabe & M. Kikuchi

  2. Semiconductor Division, Sony Corporation, Asahi, Atsugi, 243, Japan

    H. Hayashi

  3. Energy Sciences, Inc., 8 Gill Street, Woburn, Mass., 01801, USA

    K. E. Williams

Authors
  1. Y. Hayafuji
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  2. T. Yanada
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  3. H. Hayashi
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  4. K. E. Williams
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  5. S. Usui
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  6. S. Kawado
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  7. A. Shibata
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  8. N. Watanabe
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  9. M. Kikuchi
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Hayafuji, Y., Yanada, T., Hayashi, H. et al. Recrystallization of Polycrystalline Silicon Over SiO2 Through Strip Electron Beam Irradiation. MRS Online Proceedings Library 23, 491–496 (1983). https://doi.org/10.1557/PROC-23-491

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