Formation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back-scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.
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The authors would like to thank J. M. Poate for his helpful suggestions and discussion, R. Hamm for the x-ray diffraction patterns and J. M. Gibson, M. L. McDonald and M. Sosnowski for their assistance with electron microscopy. One of us (TPS) gratefully acknowledges support from an Office of Naval Research graduate fellowship. This work has been supported in part by the Office of Naval Research (L. Cooper).
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Smith, T.P., Stiles, P.J., Augustyniak, W.M. et al. Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon. MRS Online Proceedings Library 23, 453–458 (1983). https://doi.org/10.1557/PROC-23-453