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SOI by CVD: An Overview of Material Aspects and Implications of Device Properties

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Abstract

Two CVD techniques producing monocrystalline SOI films, silicon-on-sapphire (SOS) and Epitaxial Lateral Overgrowth (ELO), are described and the nature of the crystallographic defects in the films is discussed. The geometrical structure of SOI devices, device properties, dynamic characteristics, capacitance, and radiation hardness are then examined with emphasis on evaluating the potential of SOI technologies in future applications.

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Authors and Affiliations

  1. RCA Laboratories, Princeton, NJ, 08540

    L. Jastrzebski & A. G. Kokkas

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  1. L. Jastrzebski
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  2. A. G. Kokkas
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Jastrzebski, L., Kokkas, A.G. SOI by CVD: An Overview of Material Aspects and Implications of Device Properties. MRS Online Proceedings Library 23, 417–430 (1983). https://doi.org/10.1557/PROC-23-417

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