Accurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.
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T.O. Sedgwick, J. Electrochem. Soc. 130, 484 (1983).
K. Nishiyama, M. Arai and N. Watanabe, Jap. J. Appl. Phys. 19, L563 (1980).
T.E. Seidel, IEEE Electron Device Letts. EDL-4, 353 (1983).
R.B. Fair, J.J. Wortman and J. Lin, to be presented at IEDM 1983.
V.E. Borisenko and A. Nylandsted Larsen, Appl. Phys. Lett. 43, 582 (1983).
H.B. Harrison, M. Grigg, K.T. Short, J.S. Williams and A. Zylewicz, in “Laser and Electron Beam Interactions with Solids”, B.R. Appleton and G.K. Celler, eds., Vol. 4, p. 771.
S.C. Shatas and A. Gat, AG Assoc, Palo Alto, CA, private communications.
D.J. Lischner and G.K. Celler, See Ref. 6, p. 759.
R.T. Hodgson, J.E.E. Baglin, A.E. Michel, S.R. Mader and J.C. Gelpey, “Laser and Solid Interactions and Transient Thermal Processing of Materials”, J. Narayan, W.L. Brown and P.A. Lemons, eds., Proceedings of the 1982 Materials Research Soc. Conf. in Boston, Vol. 13 (North-Holland, New York 1983), p. 355.
T.O. Sedgwick, F.M. d’Heurle and S.A. Cohen, to be published.
E. Bassous, IEEE Trans. Electron Devices 25, 1178 (1978).
K.E. Bean, IEEE Trans. Electron Devices 25, 1185 (1978).
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Cohen, S.A., Sedgwick, T.O. & Speidell, J.L. New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple. MRS Online Proceedings Library 23, 321–324 (1983). https://doi.org/10.1557/PROC-23-321