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CW Backside Laser Gettering

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Abstract

A variety of backside damage techniques are available for gettering heavy-metal contaminants in silicon wafers. These include mechanical damage, ion implantation, thin film deposition, and pulsed-laser surface melting. In each case, strain fields and microscopic defects induced by the processing trap impurities as they diffuse through the wafer during subsequent high-temperature processing steps. We examine the defect structures produced by CW laser gettering, describe the dependence of gettering efficiency on wafer oxygen content and processing conditions, and demonstrate that CW laser processing can be an effective gettering technique even when the number of laser scan lines is reduced to make wafer processing acceptably rapid.

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References

  1. J. R. Monkowski, Solid State Technol., 24, 44 (July 1981) and references therein.

    CAS  Google Scholar 

  2. P. F. Schmidt and C. W. Pearce, J. Electrochem. Soc., 128, 630 (1981).

    Article  CAS  Google Scholar 

  3. D. K. Schroder, IEEE Trans. Electron Dev., ED29, 1336 (1982).

    Article  Google Scholar 

  4. A. G. Nassibiam and B. Golja, J. Appl. Phys., 53, 6168 (1982). G. A. Rozgonyi, R. P. Deysher, and C. W. Pearce, J. Electrochem. Soc., 123, 1910 (1976). G. A. Rozgonyi and R. A. Kushner, J. Electrochem. Soc., 123, 570 (1976). S. Prussin, S. P. Li, and R. H. Cockium, 153rd meeting Electrochem. Soc., Seattle, Abstract 261 (1978). L. E. Katz, C. W. Pearce, and P. F. Schmidt, 156th meeting Electrochem. Soc., Los Angeles, Abstract 485 (1979). T. E. Seidel, R. L. Meek, and A. G. callis, J. Appl. Phys., 46, 600 (1975). D. R. Young and C. M. Osburn, J. Electrochem. Soc., 120, 1578 (1973).

    Article  Google Scholar 

  5. L. E. Katz, P. F. Schmidt, and C. W. Pearce, J. Electrochem. Soc., 128, 620 (1981).

    Article  CAS  Google Scholar 

  6. A. Gat and J. F. Gibbons, Appl. Phys. Lett., 32, 142 (1978). See also A. G. Klimenko. E. A. Klimenko, and V. I. Donim, Sov. J. Quant. Electron., 5, 1289 (1976).

    Article  CAS  Google Scholar 

  7. Monsanto Co., St. Louis, Missouri. A technical discussion of the Monsanto process is given by R. A. Craven and H. W. Korb in Solid State Technol., 24, 55 (July 1981).

    CAS  Google Scholar 

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Authors and Affiliations

  1. Eastman Kodak Company, Research Laboratories, Rochester, New York, 14650

    Gilbert Hawkins & George Erikson

Authors
  1. Gilbert Hawkins
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  2. George Erikson
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Hawkins, G., Erikson, G. CW Backside Laser Gettering. MRS Online Proceedings Library 23, 315–320 (1983). https://doi.org/10.1557/PROC-23-315

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  • DOI: https://doi.org/10.1557/PROC-23-315

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