Short Time Annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps

Abstract

B and As implanted Si wafers have been thermally annealed by an array of tungsten halogen lamps at 1000–1200°C for 1–10 sec. Annealing above 1100°C leaves the crystal free of extended defects in all cases as determined by TEM. An enhanced diffusion is observed above normal values characterized by a low activation energy for both As and B samples. This enhanced diffusion is transient and occurs within about one second since the RBS and SIMS dopant profiles are identical for 1 sec and a 10 sec anneal.

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Sedgwick, T.O., Kalish, R., Mader, S.R. et al. Short Time Annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps. MRS Online Proceedings Library 23, 293–296 (1983). https://doi.org/10.1557/PROC-23-293

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