Large Area Continuous Electron Beam for Semiconductor Processing

Abstract

We have achieved wide area (38 cm2) electron beam heating of semiconductor materials using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up to 90 W/cm2 was used to anneal both boron-implanted (30 keV, 5 × 1015 atoms/cm2) n-type <100> silicon wafers as well as two types of Ti-Si composite films to form this titanium disilicide Annealing of the implanted samples was obtained without redistribution of the original dopant profile using a 15-sec. electron beam exposure. Formation of TiSi2 was found to decrease the sheet resistivity of these samples a factor of ten for both 400 Å films of Ti on Si and codeposited Ti-Si mixtures of overall stoichiometry TiSi2. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    T. O. Sedgwick, J. Electron Chem. Soc. 130, 484 (1983).

    CAS  Article  Google Scholar 

  2. 2.

    J. L. Regolini, J. F. Gibbons, T. W. Sigmon, R.F.W. Pease, T. J. Magee, and J. Peng, Appl. Phys. Lett. 34, 410 (1979).

    CAS  Article  Google Scholar 

  3. 3.

    J. A. Knapp and S. T. Picraux, Appl. Phys. Lett. 38, 873 (1981).

    CAS  Article  Google Scholar 

  4. 4.

    A. C. Greenwald, A. R. Kirkpatrick, R. G. Little, and J. A. Minnucci, J. Appl. Phys. 50, 783 (1979).

    CAS  Article  Google Scholar 

  5. 5.

    N. J. Ianno, J. T. Verdeyen, S. S. Chan, and B. G. Streetman, Appl. Phys. Lett. 39, 622 (1981).

    CAS  Article  Google Scholar 

  6. 6.

    T. Shibata, T. W. Sigmon, J. L. Regolini and J. F. Gibbons, J. Electrochem. Soc., 128(3), 637 (1981).

    CAS  Article  Google Scholar 

  7. 7.

    Juh Tzeng Lue, Yuen Chung Liu, and Wei Jiun Shen, Appl. Phys. Lett., 38(5), 372 (1981).

    CAS  Article  Google Scholar 

  8. 8.

    Setsu Suzuki, Yasushi Ohkubo, Fumitomo Matsuoka, and Tadatsugu Itoh, Appl. Phys. Lett. 42(9), 797 (1983).

    CAS  Article  Google Scholar 

  9. 9.

    J. J. Rocca, J. D. Meyer, Z. Yu, M. Farrell, and G. J. Collins, Appl. Phys. Lett. 41, 811 (1982).

    CAS  Article  Google Scholar 

  10. 10.

    T. O. Yep, R. T. Fulks, and R. A. Powell, Appl. Phys. Lett. 38, 162 (1981).

    CAS  Article  Google Scholar 

  11. 11.

    S. P. Murarka, J. Vac. Sci. Technol., 17(4), 775 (1980).

    CAS  Article  Google Scholar 

  12. 12.

    H. K. Park, private communication.

Download references

Acknowledgements

This work was supported by the Office of Naval Research, the Air Force Office of Scientific Research, and ASM America. The authors wish to thank Dick Rosier of Advanced Semiconductor Materials, Paul Sullivan of NCR Microelectronics, and H. K. Park of Tektronix Research Laboratories for providing the samples used in this work. Technical assistance of George Kovall and Bob Pinteric is also acknowledged.

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Moore, C.A., Rocca, J.J., Collins, G.J. et al. Large Area Continuous Electron Beam for Semiconductor Processing. MRS Online Proceedings Library 23, 273–278 (1983). https://doi.org/10.1557/PROC-23-273

Download citation