4He backscattering and channeling and 4-point probe resistivity measurements are used to characterize the doping of <100> Si directly from the gas phase by using a laser induced melt/recrystallization process. Impurity concentrations from 3×1019 to 5×1020 cm−3 and sheet resistivities as low as 20 Ω/□ are obtained by variation of the laser energy density or number of passes. Diodes fabricated by this process exhibit near ideal I-V characteristics with sharp reverse breakdowns determined by junction edge effects. Annealing at 850°C further reduces the generation-recombination centers to values that result in an ideality factor of 1.0.
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See S.D. Ferris, H.J. Leamy and J.M. Poate, eds., Laser-Solid Interactions and Laser Processing - 1978 (American Institute of Physics, New York 1979).; C.W. White and P.S. Peercy, eds., Laser and Electron Beam Processing of Materials (Academic Press, New York 1980).; J.F. Gibbons, L.D. Hess and T.W. Sigmon, eds., Laser and Electron-Beam Solid Interactions and Materials Processing (North-Holland, New York 1981).; B.R. Appleton and G.K. Celler, eds., Laser and Electron-Beam Interactions with Solids (North-Holland, New York 1982), and J. Narayan, W.L. Brown, and R.A. Lemons, eds., Laser-Solid Interactions and Transient Thermal Processing of Materials (North-Holland, New York 1983).
G.J. Galvin, J.W. Mayer, and M.O. Thompson, “Crystal Growth Dynamics by Pulsed Laser Melting of Single Crystal Silicon” in Proc. U.S.-Japan Seminar on Solid Phase Epitaxy and Interface Kinetics, Oiso, Japan 1983 (In Press).
J. Chikawa, F. Sato, and T. Sunada, “Atomic Process of Crystallization in Pulsed Laser Annealing” Ibid.
B.M. McWilliams, I.P. Herman, R.A. Hyde, F. Mitlitsky, and L.L. Wood, to be published.
T.M. Liu and W.G. Oldham, IEEE Electron Dev. Lett. EDL-4, 59 (1983).
G.B. Turner, D. Tarrant, G. Pollock, R. Pressley, and R. Press, Appl. Phys. Lett. 39, 967 (1981).
S. C. Perino, “The Electronic Structure and Deposition Kinetics of Arsenic on the Silicon Surface” Ph.D. Thesis, Stanford Electronics Labs (1982).
We would lime to thank M.O. Thompson for calculation of the melt depth and recrystallization velocity and J. Sturm for assistance in the diode fabrication.
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Sigmon, T.W., Carey, P.G., Press, R.L. et al. Structural and Electrical Properties of Gas Immersion Laser Doped Layers in Crystalline Silicon. MRS Online Proceedings Library 23, 247–252 (1983). https://doi.org/10.1557/PROC-23-247