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Semiconductor Processing with Excimer Lasers: An Overview

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Abstract

The present level of development of excimer lasers, as it relates to semiconductor processing, and the advantages of these lasers for such processing, are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers are presented. Major applications in the area of solar cell fabrication, silicon-on-sapphire technology, laser photochemical processing, and submicron optical lithography are outlined and discussed.

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Acknowledgments

This research was sponsored by the Division of Materials Sciences, U.S. Department of Energy, under Contract No. W-7405-eng-26 with the Union Carbide Corporation. The author would like to thank A. Gupta, R. Srinivasan, and K. Jain for permission to use illustrations appearing in Figures 7, 8, and 9, respectively. She would also like to thank R. F. Wood for his many helpful comments and careful reading of the manuscript.

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Authors and Affiliations

  1. Helionetics, Inc., San Diego, California, 92123

    R. T. Young

  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831

    R. T. Young

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Young, R.T. Semiconductor Processing with Excimer Lasers: An Overview. MRS Online Proceedings Library 23, 217–227 (1983). https://doi.org/10.1557/PROC-23-217

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