Atomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−y As crystals. It was found that k*=k0 for B in Si, Ga in Ge in the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.
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Chikawa, Ji., Sato, F. & Sunada, T. Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals. MRS Online Proceedings Library 23, 193–198 (1983). https://doi.org/10.1557/PROC-23-193