Reflectivity of Silicon-On-Sapphire during Pulsed Laser Annealing

MRS Online Proceedings Library volume 23, pages173–177(1983)Cite this article

Abstract

Using a visible probe laser (632.8 nm) we have directly observed motion of the melt front in silicon-on-sapphire during pulsed laser annealing. The average penetration and regrowth velocities have been determined to be 13 and 6.5 m/sec. respectively. These values are in agreement with recent conductivity measurements and heat flow calculations. In addition, the data demonstrate that the high-reflectivity phase can penetrate at least.5 um (Si thickness) and requires a significant amount of the time to do so. These results are further evidence that the high-reflectivity phase is molten silicon.

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Acknowledgement

The authors wish to thank J. M. Worlock for numerous helpful discussions, N.M. Johnson for the polished SOS, and R. B. Miles, B. S. H. Royce and J. Gelfand for the use of the YAG laser. This work was supported by the Defense Advanced Research Projects Agency and monitored by the Office of Naval Research under Contract No. N00014-80-C-0875.

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Affiliations

  1. Intel Corporation, Santa Clara, CA, 95051

    Y. H. Chen

  2. Department of Electrical Engineering and Computer Science, Princeton University, Princeton, NJ, 08544

    S. A. Lyon

Authors
  1. Y. H. Chen
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  2. S. A. Lyon
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Chen, Y.H., Lyon, S.A. Reflectivity of Silicon-On-Sapphire during Pulsed Laser Annealing. MRS Online Proceedings Library 23, 173–177 (1983). https://doi.org/10.1557/PROC-23-173

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