P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

Abstract

P-type conduction in bulk ZnSe has been achieved using 1×1016 cm−2 nitrogen (N) ionimplantation followed by a high temperature rapid thermal annealing. Room temperature Hall effect measurements of the sample show that the hole concentration is ≈1×1017 cm−3, and the mobility is ≈30 cm2/V-s. Photoluminescence (PL) measurements were performed to study the optical behavior of the samples, and the results show that the ion implantation damage can be partially repaired by thermal annealing at 900°C or higher. Thermal degradation and recovery of the ion-implantation damage were studied as a function of the annealing temperature.

This is a preview of subscription content, access via your institution.

References

  1. [1]

    T. Yasuda, I. Mitsuishi and H. Kukimoto, Appl. Phys. Lett. 52, 57 (1988).

    CAS  Article  Google Scholar 

  2. [2]

    H. Cheng, J. M. Depuydt, J. E. Potts and T. L. Smith, Appl. Phys. Lett. 52, 147 (1988).

    CAS  Article  Google Scholar 

  3. [3]

    A. Ohki, N. Shibata and S. Zembutsu, Jpn. J. Appl. Phys. 27, L909 (1988).

    Article  Google Scholar 

  4. [4]

    K. Akimoto, T. Miyajima and Y. Mori, Jpn. J. Appl. Phys. 28, L528 (1989).

    CAS  Article  Google Scholar 

  5. [5]

    K. Akimoto, T. Miyajima and Y. Mori, Jpn. J. Appl. Phys. 28, L531 (1989).

    CAS  Article  Google Scholar 

  6. [6]

    M. Migita, A. Taike, M. Shiiki and H. Yamamoto, J. Cryst. Growth 101, 835 (1990).

    CAS  Article  Google Scholar 

  7. [7]

    H. Mitsuhashi, A. Yahata, T. Uemoto, A. Kamata, M. Okajima, K. Hirahara and T. Beppu, J. Cryst. Growth 101, 818 (1990).

    CAS  Article  Google Scholar 

  8. [8]

    R. M. Park, M. B. Troffer, C. M. Rouleau, J. M. DePuydt and M. A. Hasse, Appl. Phys. Lett. 57, 2127 (1990).

    CAS  Article  Google Scholar 

  9. [9]

    K. Ohkawa, T. Karasawa and T. Mitsuyu, Jpn. J. Appl. Phys. 30, L152 (1991).

    CAS  Article  Google Scholar 

  10. [10]

    T. Marshall and D. A. Cammack, J. Appl. Phys. 69, 4149 (1991).

    CAS  Article  Google Scholar 

  11. [11]

    Y. S. Park and C. H. Chung, Appl. Phys. Lett. 18, 99 (1971).

    CAS  Article  Google Scholar 

  12. [12]

    Y. S. Park and B. K. Shin, J. Appl. Phys. 45, 1444 (1974).

    CAS  Article  Google Scholar 

  13. [13]

    C. H. Chung, H. W. Yoon and H. S. Kang, {cnProceedings of the 4th International Conference on Ion Implantation in Semiconductors and Other Materials}. Osaka, 1974.

  14. [14]

    Z. L. Wu, J. L. Merz, C. J. Werkhoven, B. J. Fiztpatrick and R. N. Bhargava, Appl. Phys. Lett. 40, 345 (1982).

    CAS  Article  Google Scholar 

  15. [15]

    T. Yasuda, M. Jin, J. L. Merz and J. Gaines, Proceedings of the 178 th Electrochemical Society Meeting State-of-the-Art Program on Compound Semiconductors (SOTAPOCSXIII), Seattle, 1990 (in press).

  16. [16]

    D. J. Olego, J. Petruzzello, K. Shahzad, B. Khan and D. A. Cammack (Private communication).

  17. [17]

    J. L. Merz, K. Nassau and J. W. Shiever, Phys. Rev., B, 8, 1444 (1973).

    CAS  Article  Google Scholar 

  18. [18]

    H. Tews, H. Venghaus and P.J. Dean, Phys. Rev., B, 19, 5178 (1979).

    CAS  Article  Google Scholar 

  19. [19]

    P. J. Dean, D. C. Herbert, C. J. Werkhoven, B. J. Fitzpatrick and R. N. Bhargava, Phys. Rev. B, 23, 4888 (1981).

    CAS  Article  Google Scholar 

  20. [20]

    X. J. Jiang, T. Hisamune, Y. Nozue and T. Goto, Phys. Soc. Japan 52, 4008 (1983).

    CAS  Article  Google Scholar 

Download references

Acknowledgement

The authors wish to acknowledge A. Hebling for growing bulk ZnSe and A. Glaeser for help with the some processing of these samples. We also like to thank R. N. Bhargava for encouraging support in this work. This work was supported by the Office of Naval Research, contract number N-00014-89-J-1773.

Author information

Affiliations

Authors

Corresponding author

Correspondence to M. K. Jin.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Jin, M.K., Yasuda, T., Shahzad, K. et al. P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation. MRS Online Proceedings Library 228, 345–350 (1991). https://doi.org/10.1557/PROC-228-345

Download citation