Growth Condition Dependence Of Rheed Pattern From GaAs (111)B Surface

Abstract

A 3-dimensional phase diagram is introduced to describe the dependence of the RHEED pattern from GaAs(111)B surface on growth conditions. The 2×2, transitional(1×1), and ✓19×✓19 surface reconstructions correspond to different zones in the phase diagram. A equation is given for the planes that separate these zones, which fit experimental data well. Homoepitaxial films on GaAs(111)B grown in the 2×2 region generally have bad crystal quality as determined by the ion channeling, and growth in the ✓19×✓19 region generally yields rough surface morphology. At higher substrate temperatures (≈ 650 °C), featureless films with minimum ion channeling yields of less than 4% are achieved.

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References

  1. [1.]

    C. Mailoit and D.L. Smith, Phys. Rev. B 35, 1242 (1987)

    Article  Google Scholar 

  2. [2.]

    B. K. Laurich, K. Elcess, C. G. Fonstad, J. G. Beery, C. Mailiot, and D. L. Smith, Phys. Rev. Lett., 62 649 (1989)

    CAS  Article  Google Scholar 

  3. [3.]

    E. A. Caridi, T. Y. Chang, K. W. Goossen, and L. F. Eastman, Appl. Phys. Lett. 56, 659 (1990)

    CAS  Article  Google Scholar 

  4. [4]

    A. Y. Cho, J. Appl. Phys. 41, 2780 (1970)

    CAS  Article  Google Scholar 

  5. [5.]

    K. Sugiyama J. Crystal Growth 75, 435 (1986)

    CAS  Article  Google Scholar 

  6. [6.]

    K. Elcess, J.-L. Lievin, and Fonstad J. Vac. Sci. Technol. B 6, 638 (1988)

    CAS  Article  Google Scholar 

  7. [7.]

    R. Singer and C. G. Fonstad, presentation at sixth New England MBE workshop, MIT, April 16, 1991

  8. [8.]

    T. Hayakawa, M. Kondo, T. Morita, K. Takahashi, T. Suyama, S. Yamamoto, and T. Hijikata, Appl. Phys. Lett., 51, 1705 (1987)

    CAS  Article  Google Scholar 

  9. [9.]

    T. Hayakawa, M. Kondo, T. Suyama, K. Takahashi, S. Yamamoto, and T. Hijikata, Jap. J. Appl. Phys. 26, L302 (1987)

    CAS  Article  Google Scholar 

  10. [10.]

    H. Imamoto, F. Sato, K. Imanaka, and M. Shimura, Appl. Phys. Lett., 55, 115 (1989)

    Article  Google Scholar 

  11. [11.]

    E. H. C. Parker The Technology and Physics of Molecular Beam Epitaxy (Plenum Press, New York, 1985) Chapter 1

    Google Scholar 

  12. [12.]

    W. Ranke and K. Jacobi Surface. Sci., 63, 33 (1977)

    CAS  Article  Google Scholar 

  13. [13.]

    J.-P. Reithmaier, H. Riechert and H. Schlotterer Contribution to the sixth International Conference on the Molecular Beam Epitaxy, San Diego, August 1990

  14. [14.]

    P. Chen, K. C. Rajkumar, and A. Madhukar Appl. Phys. Lett. 58, 1771 (1991)

    CAS  Article  Google Scholar 

Download references

Acknowledgement

This work is supported by the Los Alamos National Laboratory.

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Yang, K., Li, W., Taylor, A.P. et al. Growth Condition Dependence Of Rheed Pattern From GaAs (111)B Surface. MRS Online Proceedings Library 228, 261–266 (1991). https://doi.org/10.1557/PROC-228-261

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