In(As, P)/InP strained multiple quantum wells (SMQW’s) were grown with gas-source molecular-beam epitaxy (GSMBE). A successful control of the As composition was achieved over a wide range by using two techniques. High-quality samples were characterized structurally and optically by x-ray diffractometry, transmission electron microscopy (TEM), photoluminescence (PL) and absorption measurements. Excitonic emission energy and the critical layer thickness of In(As, P)/InP SMQW's are calculated as a function of the As composition. The results show that 1.06, 1.3 and 1.55 µm excitonic emission can be achieved at room temperature using this material system. We also discuss the perspective of using In(As, P)/InP SMQW’s for modulator application.
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The authors are delighted to acknowledge Dr. S. N. G. Chu at AT&T Bell Labs for TEM measurements. This work is partially supported by the Office of Naval Research and the DARP A Optoelectronic Technology Center.
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Hou, H.Q., Chin, T.P., Liang, B.W. et al. Modulator Structure Using In(As,P)/InP Strained Multiple Quantum Wells Grown By Gas-Source MBE. MRS Online Proceedings Library 228, 231–236 (1991). https://doi.org/10.1557/PROC-228-231