A new electron cyclotron resonance (ECR) plasma etching technology has been developed to realize simultaneously high selectivity, high rate and anisotropic etching for phosphorus doped poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located around the ECR position (875 gauss position) in an ECR plasma. As a result of ECR position etching, under the low pressure of 5 × 10−4 Torr, a high etching rate and an infinite selectivity to SiO2 etching are realized by using C12/O2 and Cl2/O2/SF6 etching gas.
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The author would like to thank Dr.H.Tsuya, Dr.K.Hamano, Mr.O.Kudoh and Dr.A.Ishitani for useful discussions, and to thank Mr.K.Ukai, Mr.M.Sasaki, Mr.Y.Nakagawa and Mr.K.Ikeda of ANELVA Corporation for their assistance in this experiment.
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Samukawa, S. ECR Plasma Etching Technology for ULSIs. MRS Online Proceedings Library 223, 97 (1991). https://doi.org/10.1557/PROC-223-97