High-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.
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A. Hallen, Ph. D thesis, Uppsala University, Sweden1990.
J. W. Chen and A. G. Milnes, Ann. Rev. Mater. Sci., 10, 157 (1980).
W. Wondrak and D. Silber, Physica, 129B, 322 (1985).
C. H. Seager, R. A. Anderson, J. K. G. Panitz, J. Mat. Res. 2, 96 (1987).
N. M. Johnson, C. Doland, F. Ponce, J. Walker and G. Anderson, Physica B, 170 (1991).
S. A. Ringel, H.-C. Chien and S. Ashok, Appl. Phys. Lett. 49, 728 (1986)
S. Ashok and K. Srikanth, J. Appl. Phys. 66, 1491 (1989).
A. Mogro-Campero, M. F. Chang and J. L. Benjamin, J. Electrochem. Soc. 135, 172 (1988).
A. J. Tavendale, A. A. Williams and S. J. Pearton, Appl. Phys. Lett., 48, 590 (1986).
Cappizzini and A. Matinga, Appl. Phys. Lett. 50, 918 (1987).
We would like to thank Dr. James Heddleson of Solid State Measurement for the use of their SSM150 profiler.
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Srikanth, K., Shenal, J. & Ashok, S. Atomic Hydrogen Passivation of High Energy Hydrogen Implants. MRS Online Proceedings Library 223, 241 (1991). https://doi.org/10.1557/PROC-223-241