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Atomic Hydrogen Passivation of High Energy Hydrogen Implants

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Abstract

High-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

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Acknowledgement

We would like to thank Dr. James Heddleson of Solid State Measurement for the use of their SSM150 profiler.

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Authors and Affiliations

  1. Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA, 16802.

    K. Srikanth, J. Shenal & S. Ashok

Authors
  1. K. Srikanth
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  2. J. Shenal
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  3. S. Ashok
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Srikanth, K., Shenal, J. & Ashok, S. Atomic Hydrogen Passivation of High Energy Hydrogen Implants. MRS Online Proceedings Library 223, 241 (1991). https://doi.org/10.1557/PROC-223-241

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  • DOI: https://doi.org/10.1557/PROC-223-241

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