High Quality GaAs Mis Diodes With Very Low Surface State Density

MRS Online Proceedings Library volume 209, pages703–706(1990)Cite this article

Abstract

High quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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Acknowledgement

The authors wish to thank Dr. Susumu Takahashi for the promotion of this study. The authors also wish to thank Miss Akiko Muto for giving them useful comments on the XPS analysis.

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Affiliations

  1. Hitachi Ltd., Central Research Laboratory, 1-280, Higashikoigakubo, Kokubunji, Tokyo, 185, Japan

    Yoshihisa Fujisaki & Sumiko Sakai

  2. Yokohama Research Lab., Babcock-Hitachi K.K., Yokohama, Kanagawa, Japan

    Saburo Ataka & Kenji Shibata

Authors
  1. Yoshihisa Fujisaki
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  2. Sumiko Sakai
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  3. Saburo Ataka
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  4. Kenji Shibata
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Corresponding author

Correspondence to Yoshihisa Fujisaki.

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Fujisaki, Y., Sakai, S., Ataka, S. et al. High Quality GaAs Mis Diodes With Very Low Surface State Density. MRS Online Proceedings Library 209, 703–706 (1990). https://doi.org/10.1557/PROC-209-703

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