High Quality GaAs Mis Diodes With Very Low Surface State Density


High quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

This is a preview of subscription content, access via your institution.


  1. 1.

    Y. Fujisaki and S. Goto in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by D.J. Wolford, J. Bernholc, and E.E. Haller (Mater. Res. Soc. Proc. 163, Pittsburgh, PA 1990 ) pp. 1017–1020.

    CAS  Article  Google Scholar 

  2. 2.

    Y. Nannichi, J.F. Fan, and H. Oigawa, Jpn. J. Appl. Phys. 27, L2367 (1988).

    CAS  Article  Google Scholar 

  3. 3.

    C.J. Sandroff, M.S. Hegde, L.A. Farrow, C.C. Chang, and J.P. Harbison, Appl. Phys. Lett. 54, 362 (1989).

    CAS  Article  Google Scholar 

  4. 4.

    M.S. Carpenter, M.R. Melloch, M.S. Lundstorm, and S.P. Tobin, Appl. Phys. Lett. 52, 2157 (1988).

    CAS  Article  Google Scholar 

  5. 5.

    J.F. Fan, H. Oigawa, and Y. Nannichi, Jpn. J. Appl. Phys. 27, L1331 (1988).

    CAS  Article  Google Scholar 

  6. 6.

    L.M. Terman, Solid State Electron. 5, 285 (1962).

    CAS  Article  Google Scholar 

  7. 7.

    W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16(5), 1422 (1979).

    CAS  Article  Google Scholar 

Download references


The authors wish to thank Dr. Susumu Takahashi for the promotion of this study. The authors also wish to thank Miss Akiko Muto for giving them useful comments on the XPS analysis.

Author information



Corresponding author

Correspondence to Yoshihisa Fujisaki.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Fujisaki, Y., Sakai, S., Ataka, S. et al. High Quality GaAs Mis Diodes With Very Low Surface State Density. MRS Online Proceedings Library 209, 703–706 (1990). https://doi.org/10.1557/PROC-209-703

Download citation