Structural Defects in Laser Annealed Arsenic Implanted Silicon

MRS Online Proceedings Library volume 209, pages505–510(1990)Cite this article

Abstract

Laser annealed arsenic implanted silicon specimens with doses ranging from 6x1015 to 7x1016 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (∼5Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer, (Academic Press, New-York, 1982).

    Google Scholar 

  2. 2.

    Pulsed Laser Annealing of Semiconductors, edited by R. F. Wood, C. W. White and R. T. Young, Vol. 23 of Semiconductors and Metals, (Academic Press, New York, 1984).

  3. 3.

    K. C. Pandey, A. Erbil, G. S. Cargill III, R. F. Boehme and D. Vanderbilt, Phys. Rev. Lett. 61, 1282 (1988).

    CAS  Article  Google Scholar 

  4. 4.

    A. Armigliato, D. Nobili, S. Sonmi, A. Bourret and P. Werner, J. Electrochem. Soc. 133, 2560 (1986).

    CAS  Article  Google Scholar 

  5. 5.

    A. Parisini, A. Bourret and A. Armigliato, in Microscopy of Semiconducting Materials 1987, Inst. Phys. Conf. Ser. 87 (Institute of Physics, Oxford, 1987) pp. 491–497.

    Google Scholar 

  6. 6.

    A. Parisini, A. Bourret, A. Armigliato, M. Servidori, S. Solmi, R. Fabbri, J. R. Regnard and J. L. Allain, J. Appl. Phys. 67, 2320 (1990).

    CAS  Article  Google Scholar 

  7. 7.

    A. G. Cullis, H. C. Weber and N. G. Chew, Appl. Phys. Lett. 36, 547 (1980).

    CAS  Article  Google Scholar 

  8. 8.

    J. Narayan, J. Flechter and J. Eby in Defects in Semiconductors, edited by J. Narayan and T.Y. Tan (Mater. Res. Soc. Proc. 2 1981), pp. 409–418.

    CAS  Article  Google Scholar 

  9. 9.

    C. W. White, P. P. Pronko, S. R. Wilson, B. R. Appleton, J. Narayan and R. T. Young, J.Appl. Phys. 50, 3261 (1979).

    CAS  Article  Google Scholar 

  10. 10.

    J. F. Ziegler, J.P. Biersack and V. Littmark, in The Stopping Power of Ions in Matter, Vol. 1, edited by J.F. Ziegler (Pergamonm, New York, 1985), p. 202; and J.F. Ziegler, private communication.

    Google Scholar 

  11. 11.

    C. W. White, S. R. Wilson, B. R. Appleton and F. W. YoungJr., J. Appl. Phys. 51, 738 (1980).

    CAS  Article  Google Scholar 

  12. 12.

    J. Narayan in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett (Mater.Res. Soc. Proc. 14, 1983), pp. 491–504.

    CAS  Article  Google Scholar 

  13. 13.

    G. S. Cargill III, J. Angilello and K. L. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).

    CAS  Article  Google Scholar 

  14. 14.

    D. K. Bowen, B. K. Tanner, N. Loxley, L. Cooke and M. A. Capano, presented at MRS Fall Meeting, Boston, MA, 1990 (tiSymp. J: Advances in Surface and Thin Film Diffraction}).

  15. 15.

    B. C. Larson and J. F. Barhorst, J. Appl. Phys. 51, 3181 (1980).

    CAS  Article  Google Scholar 

Download references

Author information

Author notes

  1. M. Matsuura

    Present address: Miyagi National College of Technology, Natori Miyagi, 981-12, Japan

Affiliations

  1. IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY, 10598, USA

    J. M. Tonnerre, M. Matsuura & G. S. Cargill III

  2. MIT, Dept. of Materials Science and Engineering, Cambridge, MA, 02139, USA

    L. W. Hobbs

Authors
  1. J. M. Tonnerre
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Matsuura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. S. Cargill III
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. W. Hobbs
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. M. Tonnerre.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Tonnerre, J.M., Matsuura, M., Cargill III, G.S. et al. Structural Defects in Laser Annealed Arsenic Implanted Silicon. MRS Online Proceedings Library 209, 505–510 (1990). https://doi.org/10.1557/PROC-209-505

Download citation