Structural Defects in Laser Annealed Arsenic Implanted Silicon

Abstract

Laser annealed arsenic implanted silicon specimens with doses ranging from 6x1015 to 7x1016 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (∼5Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.

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Correspondence to J. M. Tonnerre.

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Tonnerre, J.M., Matsuura, M., Cargill III, G.S. et al. Structural Defects in Laser Annealed Arsenic Implanted Silicon. MRS Online Proceedings Library 209, 505–510 (1990). https://doi.org/10.1557/PROC-209-505

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