Laser annealed arsenic implanted silicon specimens with doses ranging from 6x1015 to 7x1016 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (∼5Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer, (Academic Press, New-York, 1982).
Pulsed Laser Annealing of Semiconductors, edited by R. F. Wood, C. W. White and R. T. Young, Vol. 23 of Semiconductors and Metals, (Academic Press, New York, 1984).
K. C. Pandey, A. Erbil, G. S. Cargill III, R. F. Boehme and D. Vanderbilt, Phys. Rev. Lett. 61, 1282 (1988).
A. Armigliato, D. Nobili, S. Sonmi, A. Bourret and P. Werner, J. Electrochem. Soc. 133, 2560 (1986).
A. Parisini, A. Bourret and A. Armigliato, in Microscopy of Semiconducting Materials 1987, Inst. Phys. Conf. Ser. 87 (Institute of Physics, Oxford, 1987) pp. 491–497.
A. Parisini, A. Bourret, A. Armigliato, M. Servidori, S. Solmi, R. Fabbri, J. R. Regnard and J. L. Allain, J. Appl. Phys. 67, 2320 (1990).
A. G. Cullis, H. C. Weber and N. G. Chew, Appl. Phys. Lett. 36, 547 (1980).
J. Narayan, J. Flechter and J. Eby in Defects in Semiconductors, edited by J. Narayan and T.Y. Tan (Mater. Res. Soc. Proc. 2 1981), pp. 409–418.
C. W. White, P. P. Pronko, S. R. Wilson, B. R. Appleton, J. Narayan and R. T. Young, J.Appl. Phys. 50, 3261 (1979).
J. F. Ziegler, J.P. Biersack and V. Littmark, in The Stopping Power of Ions in Matter, Vol. 1, edited by J.F. Ziegler (Pergamonm, New York, 1985), p. 202; and J.F. Ziegler, private communication.
C. W. White, S. R. Wilson, B. R. Appleton and F. W. YoungJr., J. Appl. Phys. 51, 738 (1980).
J. Narayan in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett (Mater.Res. Soc. Proc. 14, 1983), pp. 491–504.
G. S. Cargill III, J. Angilello and K. L. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).
D. K. Bowen, B. K. Tanner, N. Loxley, L. Cooke and M. A. Capano, presented at MRS Fall Meeting, Boston, MA, 1990 (tiSymp. J: Advances in Surface and Thin Film Diffraction}).
B. C. Larson and J. F. Barhorst, J. Appl. Phys. 51, 3181 (1980).
About this article
Cite this article
Tonnerre, J.M., Matsuura, M., Cargill III, G.S. et al. Structural Defects in Laser Annealed Arsenic Implanted Silicon. MRS Online Proceedings Library 209, 505–510 (1990). https://doi.org/10.1557/PROC-209-505